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Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires
摘要： We studied the physics of common p- and n-type dopants in hexagonal-diamond Si –a Si polymorph that can be synthesized in nanowire geometry without the need of extreme pressure conditions– by means of first-principles electronic structure calculations and compared our results with those for the well-known case of cubic-diamond nanowires. We showed that i) as observed in recent experiments, at larger diameters (beyond the quantum confinement regime) p-type dopants prefer the hexagonal-diamond phase with respect to the cubic one as a consequence of the stronger degree of three-fold coordination of the former, while n-type dopants are at a first approximation indifferent to the polytype of the host lattice; ii) in ultra-thin nanowires, because of the lower symmetry with respect to bulk systems and the greater freedom of structural relaxation, the order is reversed and both types of dopant slightly favor substitution at cubic lattice sites; iii) the difference in formation energies leads, particularly in thicker nanowires, to larger concentration differences in different polytypes, which can be relevant for cubic-hexagonal homojunctions; iv) ultra-small diameters exhibit, regardless of the crystal phase, a pronounced surface segregation tendency for p-type dopants. Overall these findings shed light on the role of crystal phase in the doping mechanism at the nanoscale and could have a great potential in view of the recent experimental works on group IV nanowires polytypes.
关键词： density functional theory,Nanowires,formation energy,dopants,2H-Si,hexagonal diamond silicon
更新于2025-09-23 15:23:52
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Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application
摘要： Silicon ribbons (SiRi) have been well-established as highly sensitive transducers for biosensing applications thanks to their high surface to volume ratio. However, selective and multiplexed detection of biomarkers remains a challenge. Further, very few attempts have been made to integrate SiRi with complementary-metal-oxide-semiconductor (CMOS) circuits to form a complete lab-on-chip (LOC). Integration of SiRi with CMOS will facilitate real time detection of the output signal and provide a compact small sized LOC. Here, we propose a novel pixel based SiRi device monolithically integrated with CMOS ?eld-effect-transistors (FET) for real-time selective multiplexed detection. The SiRi pixels are fabricated on a silicon-on-insulator wafer using a top-down method. Each pixel houses a control FET, ?uid-gate (FG) and SiRi sensor. The pixel is controlled by simultaneously applying frontgate (VG) and backgate voltage (VBG). The liquid potential can be monitored using the FG. We report the transfer characteristics (ID-VG) of N- and P-type SiRi pixels. Further, the ID-VG characteristics of the SiRis are studied at different VBG. The application of VBG to turn ON the SiRi modulates the subthreshold slope (SS) and threshold voltage (VTH) of the control FET. Particularly, N-type pixels cannot be turned OFF due to the control NFET operating in the strong inversion regime. This is due to large VBG (≥25 V) application to turn ON the SiRi sensor. Conversely, the P-type SiRi sensors do not require large VBG to switch ON. Thus, P-type pixels exhibit excellent ION/IOFF ≥ 106, SS of 70–80 mV/dec and VTH of 0.5 V. These promising results will empower the large-scale cost-ef?cient production of SiRi based LOC sensors.
关键词： silicon ribbon biosensor,SiRi backgate mode,silicon ribbon pixel,selective multiplexed detection,SiRi CMOS integration,SiRi frontgate mode,lab-on-chip
更新于2025-09-23 15:22:29
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A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications
摘要： Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.
关键词： transceiver,silicon photonics,Kerr nonlinearity,optical phased array,Coarse Wavelength Division Multiplexing (CWDM),multiplexing,LIDAR,silicon nitride,beam steering,frequency comb,grating coupler
更新于2025-09-23 15:22:29
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Optically reconfigurable planar monopole antenna for cognitive radio application
摘要： Frequency reconfigurable antenna is one of the important elements needed for cognitive radio application. Such antenna can be designed using highly resistive (HR) silicon (Si) operating as an optical switch. This letter presents a novel frequency reconfigurable planar monopole antenna suitable for cognitive radio application. The antenna is designed using HR Si working as an optical switch. The main idea behind the design of antenna is the redistribution of surface current on the antenna while changing the state of Si switches optically from high resistance to low resistance. The antenna is highly compact and uses only two switches for multiband reconfiguration. It is switchable on 1.9 GHz, 2.75 GHz, 3.7 GHz, 4.1 GHz, 4.6 GHz, 4.8 GHz, and 7.6 to 11 GHz frequency bands. Simulated and measured results are presented for the antenna. To the best of authors knowledge, this is the first multiband optically reconfigurable planar monopole antenna.
关键词： high-resistive (HR) silicon,optical excitation,low-resistive (LR) silicon,planar monopole antenna,cognitive radio,reconfigurable,multiband
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE CPMT Symposium Japan (ICSJ) - Kyoto, Japan (2018.11.19-2018.11.21)] 2018 IEEE CPMT Symposium Japan (ICSJ) - 400G Multi-Mode and Single-Mode Optical Transmitter Realized by Hybrid-Integrated Silicon Interposer for Data Center Application
摘要： We experimentally demonstrated both 400G multi-mode (MM) and single-mode (SM) optical engines based on Silicon interposer to hybrid integrate laser dice, optics, and fiber arrays. The interposer realized by Silicon bulk micro-machining makes the engine very compact and easily assembled by the built-in Silicon precision. Clear optical eyes with TDECQ of 1.7dB and of 2.7 dB are obtained for 50Gb/s VCSEL in MM optical engine and 100Gb/s EML in SM one, respectively.
关键词： Optical Engine,Hybrid-Integration,VCSEL,Optical Sub-Assembly (OSA),and EML Laser,Silicon Interposer,Silicon Photonics
更新于2025-09-23 15:22:29
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Flip-Chip Integration of InP and SiN
摘要： We present an interface for hybrid flip-chip integration of InP based laser sources to silicon nitride based photonic platforms. The design enables efficient high optical power coupling over a wide temperature range. The optical modes of laser and SiN chip are expanded using integrated tapers allowing for high alignment tolerance. The chips comprise physical alignment stops for vertical alignment. In the horizontal direction, the integration interface is optimized for active and/or visual alignment with high precision using precise visual alignment marks. The hybrid integrated chip shows a waveguide coupled optical power of more than 40mW and can operate at elevated temperatures up to 85°C.
关键词： silicon photonics,silicon nitride,flip-chip,laser,hybrid integration
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Evaluation of 2.5 kV Silicon Carbide MOSFET for 1.5 kV Solar Inverter Application
摘要： 1.5 kV DC link voltage has been a trend for the solar industry. Moving from 1 kV to 1.5 kV DC voltage can increase string length, enhance inverter conversion ability, increase array block sizes, and improve performance. Multilevel converters are the natural choices while the control becomes more complicated. If a simple two-level converter is adopted, the 1.7 kV device may not be applicable considering the voltage derating for certain failure rate. Therefore, devices with higher blocking voltage should be considered. This paper reports for the first time the performance characterization of 2.5 kV Silicon Carbide (SiC) MOSFET. The potential application of this device for 1.5 kV solar inverter is also evaluated.
关键词： Solar Inverter,Silicon Carbide MOSFET,Silicon Carbide converter
更新于2025-09-23 15:22:29
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - A novel organic coating assisted laser drilling method for TSV fabrication
摘要： Through-silicon vias (TSVs) is a promising three-dimensional packaging solution in post-Moore's law era in the semiconductor industry. The fabrication of through silicon via plays an important role in three-dimensional packaging. Laser drilling is widely used in TSVs fabrication. However, the geometry quality of laser drilling is unsatisfied and heat affected zone (HAZ) is intrinsic. In this work, a novel organic coating assisted picosecond UV laser drilling method is proposed to obtain high-quality TSVs, the HAZ was noticeably eliminated and the TSVs quality was significantly improved. The effects of the organic thickness and laser power on the TSVs' quality were also studied in detail. It is found that the diameter of vias decreases with the increase of the organic thickness and decrease of the laser power. The minimum diameter of TSV obtained by this method is about 15 μm while the aspect ratio is beyond 30. Most importantly, by coating with the organic layer, the minimized via diameter can be decreased to about only 70% of the laser spot size which breaks the limit that the minimized via should be larger than or at least equal to the laser spot size. These findings will be helpful for TSV technology development in modern three-dimensional packaging.
关键词： ultraviolet picosecond laser drilling,through silicon via,heat affected zone elimination,organics coating method
更新于2025-09-23 15:22:29
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Large area silicon-air-silicon DBRs for infrared filter applications
摘要： This paper presents the design, fabrication, and optical characterization of silicon-based thin film Fabry-Pérot filters for spectroscopic sensing applications at short-wave infrared (SWIR: 1.5–2.5 μm) and mid-wave infrared (MWIR: 3–5 μm) wavelengths. Filter performance is enhanced using distributed Bragg reflectors composed of silicon and air-gap layers for enhanced refractive index contrast. A peak-to-peak surface variation of less than 20 nm in the fabricated micromachined structures was achieved across a large spatial area of 1 mm × 1 mm. Spectral measurements on released Fabry-Pérot filters show excellent agreement with optical simulations. The fabricated Fabry-Pérot filters demonstrate peak transmittance values greater than 50% across all spectral ranges, with measured full width at half maximum values in the range of 50 nm rendering them suitable for use in spectral sensing and imaging in the SWIR and MWIR wavelength ranges.
关键词： Silicon,Fabry-Perot interferometers,Spectroscopy,Optical device fabrication
更新于2025-09-23 15:22:29
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Dual Parallel Multi-electrode Traveling Wave Mach-Zehnder Modulator for 200 Gb/s Intra-datacenter Optical Interconnects
摘要： We present a silicon photonic dual parallel multi-electrode Mach-Zehnder modulator (MEMZM) based transmitter targeting 200 Gb/s 4-level pulse amplitude modulation (PAM4) short reach transceivers. The MEMZMs have an average Vπ and electro-optic (EO) bandwidth of 5 V and 38 GHz, respectively. The transmitter is characterized versus receiver equalizer taps, received signal power, driving voltage swing, crosstalk voltage swing, bitrate, and reach. Results reveal that using only a 3-tap equalizer at the receiver, 100 Gb/s PAM4 net rate per lane can be achieved at a bit error rate (BER) below the KP4 forward error correction (KP4-FEC) threshold of 2.4 × 10?4. Moreover, up to 128 Gb/s can be received at a BER below the KP4-FEC threshold using only 2 Vpp and 1 Vpp driving the MEMZM segments. Then, both MEMZMs are driven simultaneously to assess the crosstalk impact on the BER performance at parallel operation. Driven by four binary signals, we demonstrate 200 Gb/s PAM4 transmission over up to 10 km of single mode fiber at a BER below the KP4-FEC threshold.
关键词： Optical interconnects,Fiber optics systems,silicon nanophotonics,Electro-optical systems
更新于2025-09-23 15:22:29