- 标题
- 摘要
- 关键词
- 实验方案
- 产品
过滤筛选
- 2019
- 2018
- JBSFET
- Robustness
- MOSFET
- Reliability
- Silicon Carbide
- 4H-SiC
- Failure Mechanism
- Short Circuit
- Ruggedness
- silicon photonics
- Electrical Engineering and Automation
- Optoelectronic Information Science and Engineering
- Electronic Science and Technology
- North Carolina State University
- MediaTek, Inc.
- JCET STATS ChipPAC Pte. Ltd.
-
The 1.2 kV 4H-SiC OCTFET: A New Cell Topology with Improved High Frequency Figures-of-Merit
摘要： A 1.2 kV rated 4H-SiC OCTFET device with octagonal-cell topology is proposed and experimentally demonstrated for the first time. The device was first optimized using TCAD numerical simulations. Devices were then successfully fabricated in a 6 inch foundry. From the measured electrical characteristics, the OCTFET is demonstrated to have 1.4× superior HF-FOM [Ron×Qgd], and 2.1× superior HF-FOM [Ron×Cgd] compared with the conventional linear-cell MOSFET.
关键词： Silicon carbide,ALL,Octagonal,Qgd,HF-FOMs,Cell,Cgd,MOSFET,4H-SiC
更新于2025-09-23 15:23:52
-
Fracture strength of silicon torsional mirror resonators fully coated with submicrometer-thick PECVD DLC film
摘要： In this work, we attempted to enhance the torsional fracture strength of single crystal silicon (SCS) resonators for micro mirrors application by introducing a 300 nm-thick diamond-like carbon (DLC) coating. The SCS torsional beams of the resonators were 20 μm wide and 9 μm thick, and fully coated with DLC films using plasma enhanced chemical vapor deposition (PECVD) at three different deposition bias voltages. The resonators were driven by a piezoelectric actuator and their angular amplitude was measured by a custom-made torsional test system. Average nominal torsional fracture strength of DLC coated resonators was 11.1–30.0% higher than that of bare SCS, reaching a value of 2.93 GPa. The torsional fracture strength of resonators exhibited a good agreement with the tensile fracture strength. Deviations in torsional strength were reduced with increasing deposition bias voltage due to the compressive residual stress of DLC films.
关键词： Single crystal silicon,Micro mirror resonator,Diamond-like carbon film,Strength deviation,Torsional fracture strength
更新于2025-09-23 15:23:52
-
Formation of 45° Silicon (110) Surface Using Triton X- <i>n</i> Surfactants in Potassium Hydroxide for Infrared Applications
摘要： Silicon (Si) micromirrors are an integral feature for many micro-optomechanical systems (MOEMS). Such mirrors are generally wet etched in alkaline solution at elevated temperature. For 90? beam steering applications, 45? slanted Si (110) plane is the prime choice fabricated with the incorporation of tensioactive surfactants. Here, Triton-Si and Triton-hydroxide (OH?)/H2O interaction using varying hydrophilic chain length Triton (X-45, X-100 and X-405) were investigated. The surfactant concentration was varied from 0 to 1000 ppm in potassium hydroxide (KOH). Triton molecules were shown to adsorb preferentially on (110) than on (100) surface. Longer chain length Triton hampered OH? access to Si surface resulting in slower etch rate. In contrast, contact angle measurement suggested that shorter Triton interfaced better with Si surface. Later, Si wafers etched in Triton 10 ppm – KOH were examined. The measured output for (110)X-45, (110)X-100, (110)X-405 and polished Si wafer reference (Rq < 5?) mirrors were 0.58, 0.76, 0.72 and 1.25 mW, respectively. Subsequently, Si-SiO2 thin film in [HLHL]2-substrate configuration was fabricated. Broadband micromirror for use in 3.0–5.5 μm spectrum range was experimentally realized with reflected efficiency of 73%.
关键词： wet etching,optical measurement,Silicon micromirrors,Triton X-n,surface roughness,potassium hydroxide,surfactants
更新于2025-09-23 15:23:52
-
Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction
摘要： Silicon nanopillar (Si NP) arrays with the axial p-n junction were formed and investigated. A method to fabricate Si NP ordered arrays by means of electron beam lithography using the negative electron resist and reactive ion etching is presented. The effect of strong resonance light scattering – change of the color of separate Si NPs - was demonstrated. One or several minima were registered in the measured reflection spectra. Thereat, the position of reflection minimum was changed with a change in Si NP diameter. A shift of the minimum position towards the longer wavelength spectral region with an increase in Si NP diameter was observed. A shift of the position of minima to the shorter wavelength spectral region with a decrease in Si NP pitch in microarrays with the same Si NP diameter was observed. The quantitative divergence in the position of reflection minima in Si NPs with calculated dependencies for Mie resonances was found. High photosensitivity of Si NP arrays with axial p-n junction to visible and near IR light was discovered. So, these structures may be used for selective photonic sensors.
关键词： reflectance spectra,silicon nanopillars,electrophysical properties,reactive ion etching,electron beam lithography
更新于2025-09-23 15:23:52
-
Temperature-dependent characterizations on parasitic capacitance of tapered through silicon via (T-TSV)
摘要： With increasing integration density of three-dimensional ICs, temperature is one of the major concern of circuit design, which influences the performance and reliability. In this paper, the parasitic capacitance of tapered TSV (T-TSV) with respect of thermal properties is studied. The concept of the Temperature Coefficient of Capacitance (TCC) is proposed to model the sensitive of TSV capacitance to temperature. It is found that TSV capacitance is sensitive to temperature under high frequency application, and the MOS capacitance variation is the main reason for the change of TSV capacitance and the TCC increases with elevated temperature. Furthermore, the affections of TSV dimensions on TCC are discussed. It is shown that the TCC increases gradually as the TSV radius increases, while the thickness of dielectric layer is the opposite. The cylinder TSV is less thermal sensitive than tapered TSV. This paper provides basis for TSV design considering the temperature effect.
关键词： tapered through silicon via (T-TSV),parasitic capacitance,temperature effect,three-dimensional ICs (3D ICs)
更新于2025-09-23 15:23:52
-
Novel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire
摘要： An aqueous ferric nitrate nonahydrate (Fe(NO3)3.9H2O) and magnesium oxide (MgO) were mixed and deposited on silicon nanowires (SiNWs), the carbon nanotubes (CNTs) formed by the concentration of Fe3O4/MgO catalysts with the mole ratio set at 0.15:9.85 and 600°C had diameter between 15.23 to 90nm with high-density distribution of CNT while those with the mole ratio set at 0.45:9.55 and 730°C had diameter of 100 to 230nm. The UV/Vis/NIR and FT-IR spectroscopes clearly confirmed the presence of the silicon-CNTs hybrid structure. UV/Vis/NIR, FT-IR spectra and FE-SEM images confirmed the silicon-CNT structure exists with diameters ranging between 15-230nm. Thus, the study demonstrated cost effective method of silicon-CNT composite nanowire formation via Iron-oxide Catalyze synthesis.
关键词： SiNWs,iron-oxide catalyze,silicon-CNT structure,hybrid structure,High-density
更新于2025-09-23 15:23:52
-
Real Time Monitoring of a UV Light-Assisted Biofunctionalization Protocol Using a Nanophotonic Biosensor
摘要： A protocol for the covalent biofunctionalization of silicon-based biosensors using a UV light-induced thiol–ene coupling (TEC) reaction has been developed. This biofunctionalization approach has been used to immobilize half antibodies (hIgG), which have been obtained by means of a tris(2-carboxyethyl)phosphine (TCEP) reduction at the hinge region, to the surface of a vinyl-activated silicon-on-insulator (SOI) nanophotonic sensing chip. The response of the sensing structures within the nanophotonic chip was monitored in real time during the biofunctionalization process, which has allowed us to confirm that the bioconjugation of the thiol-terminated bioreceptors onto the vinyl-activated sensing surface is only initiated upon UV light photocatalysis.
关键词： UV light photocatalysis,biofunctionalization,silicon on insulator,nanophotonic sensor,half antibodies
更新于2025-09-23 15:23:52
-
Resonance Coupling in Heterostructures Composed of Silicon Nanosphere and Monolayer WS <sub/>2</sub> : A Magnetic-Dipole-Mediated Energy Transfer Process
摘要： Light?matter resonance coupling is a long-studied topic for both fundamental research and photonic and optoelectronic applications. Here we investigated the resonance coupling between the magnetic dipole mode of a dielectric nanosphere and 2D excitons in a monolayer semiconductor. By coating an individual silicon nanosphere with a monolayer of WS2, we theoretically demonstrated that, because of the strong energy transfer between the magnetic dipole mode of the nanosphere and the A-exciton in WS2, resonance coupling evidenced by anticrossing behavior in the scattering energy diagram was observed, with a mode splitting of 43 meV. In contrast to plexcitons, which involve plasmonic nanocavities, the resonance coupling in this all-dielectric heterostructure was insensitive to the spacing between the silicon nanosphere core and the WS2 shell. Additionally, the two split modes exhibited distinct light-scattering directionality. We further experimentally demonstrated the resonance coupling effect by depositing silicon nanospheres with different diameters onto a WS2 monolayer and collecting the scattering spectra of the resulting heterostructures under ambient conditions. We further demonstrated active control of the resonance coupling by temperature scanning. Our findings highlighted the potential of our all-dielectric heterostructure as a solid platform for studying strong light?matter interactions at the nanoscale.
关键词： magnetic dipole modes,two-dimensional materials,resonance coupling,two-dimension excitons,silicon nanospheres
更新于2025-09-23 15:23:52
-
Device noise reduction for silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate
摘要： The sensitivity of metal-oxide-semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced device noise, 2.1×10-9 V2μm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
关键词： Noise reduction,field-effect transistor,ion sensor,low frequency noise,schottky junction gate,silicon nanowire
更新于2025-09-23 15:23:52
-
Amorphous silicon and silicates-stabilized ZrO2 hollow fiber with low thermal conductivity and high phase stability derived from a cogon template
摘要： ZrO2 ?bers are used as refractory materials owing to their excellent thermal resistance and thermal stability. Natural cogon ?ber is a type of hollow Gramineae ?ber, and usually contains a small amount of amorphous silicon and silicates, such as SiO2, MgSiO3, CaSiO4, and Al2SiO5, which can e?ectively avoid the phase transition of ZrO2. In this study, hollow ZrO2 ?bers with remarkable thermal insulation and phase stability were synthesized using a cogon ?ber template. The results showed that the ?nal ZrO2 ?bers successfully inherited the hollow structure and amorphous substance from the cogon template. The hollow structure of the biomorphic ZrO2 ?ber helped prevent heat ?ow more e?ciently compared to solid ?bers and reduced the thermal conductivity to a signi?cant extent. In addition, the amorphous silicon and silicates played an important role in the phase stability of tetragonal ZrO2; the transformation from the tetragonal to monoclinic phase was avoided at room temperature and in humid environment.
关键词： Thermal conductivity,Amorphous silicon and silicates,Cogon ?bers,Phase stability,ZrO2 hollow ?bers
更新于2025-09-23 15:23:52