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Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays
摘要： Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because of their high electrical performance, low process temperature, high uniformity, and ease of industrial manufacturing. n-type oxide semiconductors, such as InGaZnO, are highly developed and have already been commercialized for backplane drivers of flat-panel displays. To date, developing CMOS technology is still an urgent issue in order to build low-power electronic circuits based on oxide semiconductors. In this paper, various CMOS circuits, including inverters, NAND, NOR, XOR, d-latches, full adders, and 7-, 11-, 21-, and 51-stage ring oscillators (ROs), are fabricated based on sputtered p-type tin monoxide and n-type InGaZnO. The inverters show rail-to-rail output voltage behavior, low average static power consumption of 8.84 nW, high noise margin level up to ~40% supply voltage, high yield of 98%, and high uniformity with negligible standard deviation. The NAND, NOR, XOR, d-latches, and full adders show desirably ideal input–output characteristics. The performances of ROs indicate small stage delay of ~1 μs, extremely high uniformity and high yield which are essential for large-area thin-film electronics. This paper may inspire constructions of low power, large area, large scale, and high-performance transparent/flexible CMOS circuits fully based on oxide semiconductors for applications beyond flat-panel displays.
关键词： CMOS,oxide semiconductor,thin-film transistor (TFT),IC
更新于2025-09-23 15:22:29
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Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors; 溶液法制备低电压及高性能非晶GaSnO薄膜晶体管;
摘要： Gallium-tin oxide (GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency, chemical states and surface morphologies, along with the electrical properties, were dependent on Ga contents and annealing temperatures. The optimized GTO channel layer was applied in the high-k Al2O3 thin film transistor (TFT) with a low operation voltage of 2 V, a maximum field-effect mobility of 69 cm2 V?1 s?1, a subthreshold swing (SS) of 76 mV dec?1, a threshold voltage of 0.67 V and an on-off current ratio of 1.8×107. The solution-processed amorphous-GTO-TFTs would promote the development of low-consumption, low-cost and high performance In-free TFT devices.
关键词： GTO semiconductor films,thin-film transistor,Al2O3 dielectric,stability
更新于2025-09-23 15:22:29
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Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer
摘要： Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO2) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO2 is oxygen-vacancies rich, which may dope TiO2 and contribute to a lower resistance. By inserting TiO2 between Ti and n-Si, Ids of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO2 insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO2 interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs.
关键词： ohmic contact,thin film transistor,single-crystal Si nanomembrane (Si NMs),TiO2 insertion layer
更新于2025-09-23 15:22:29
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Transport models in disordered organic semiconductors and their application to the simulation of thin-film transistors
摘要： Relevant organic thin-film transistor (OTFT) simulation software must account for the main specificities of organic semiconductors (OSC) in term of free carriers’ density of states, transport mechanisms, and injection/collection properties from/to the device contacts. Among the parameters impacting the OTFT performance the carrier mobility is a key parameter. Usual methods to extract the mobility from current-voltage (I-V) measurements lead to obtained only an apparent, or effective, mobility. The value of the apparent mobility is different of the intrinsic channel organic semiconductor mobility. Despite this effective mobility actually determines most of a given device performance, therefore providing a very useful technology benchmark, it does not describe the intrinsic organic semiconductor material transport properties, and may even be misleading in the route to improve the OTFT fabrication process. To obtain a better understanding of the transport properties in OSCs using OTFT electrical characterization, implementing an appropriate physical mobility model in an OTFT I-V simulation software is a good way. The present paper gives a review of the carrier mobility models which can be implemented in OTFT simulation software. The review is restricted to the analytical and semi-analytical physical models taking into account the temperature, the carrier concentration and the electric field dependence of the carrier mobility in disordered OSCs.
关键词： mobility,transport,modeling,organic semiconductors,Organic thin-film transistor (OTFT)
更新于2025-09-23 15:22:29
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Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping
摘要： Praseodymium-doped indium zinc oxide (PrIZO) have been employed as the channel layer of thin film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NBIS) were achieved in the PrIZO-TFTs. Meanwhile, the PrIZO-TFTs showed reasonable characteristics with a high field effect mobility of 26.3 cm2/Vs, SS value of 0.28 V/decade, and Ion/Ioff ratio of 108. X-ray photoelectron spectroscopy (XPS), microwave photoconductivity decay (Micro-PCD) and photoluminescence spectra (PL) were employed to analyze the effects of the Pr concentrations on the performance of PrIZO-TFTs. We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors. Finally, a prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices.
关键词： Praseodymium doping,negative bias illumination stress,metal oxide,thin film transistor,photo-response
更新于2025-09-23 15:22:29
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[IEEE 2018 International Flexible Electronics Technology Conference (IFETC) - Ottawa, ON, Canada (2018.8.7-2018.8.9)] 2018 International Flexible Electronics Technology Conference (IFETC) - Flexible Printed Organic Thin-Film Transistor Devices and Integrated Circuit Applications
摘要： The latest developments in flexible and printed electronics technology based on organic thin-film transistor (OTFT) devices as well as printable electronic materials are briefly reported on in this paper. The successful fabrication and operation of printed OTFT devices and a variety of integrated circuit applications such as flip-flop logic gates and operational amplifiers will be demonstrated.
关键词： Organic electronics,Flexible electronics,Organic thin-film transistor,Printed electronics
更新于2025-09-23 15:22:29
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Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin Film Transistors
摘要： Amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with high mobility are highly desirable to achieve high-speed operation in active-matrix displays and large-area sensors. Only a few works provided potential solutions. In this work, we have embedded carbon nanotubes (CNTs) into sputtered a-IGZO film to form a-IGZO/CNT/a-IGZO (ACA) sandwiched channel. In the ACA channel, the CNT percolation networks connected by the a-IGZO film work as high-speed carrier paths to enable faster transport of carriers during the on state while it does not degrade the leakage performance during the off state. The type and the embedding location of the CNT percolation network are critical to determine the ACA device performance, which is analyzed and verified by experiment and simulation. The optimum ACA design has approximately doubled the mobility and the on current density of the TFT. The design owns relatively better uniformity and provides a high-speed TFT solution for the advanced electronics.
关键词： mobility,amorphous indium gallium zinc oxide,carbon nanotube,thin film transistor,sandwiched structure
更新于2025-09-23 15:22:29
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[IEEE NAECON 2018 - IEEE National Aerospace and Electronics Conference - Dayton, OH, USA (2018.7.23-2018.7.26)] NAECON 2018 - IEEE National Aerospace and Electronics Conference - Ultrasensitive label-free tobramycin detection with aptamer-functionalized ZnO TFT biosensor
摘要： Aminoglycoside antibiotic such as tobramycin is critical to the treatment of Gram-negative bacterial diseases such as Cystic Fibrosis (Pseudomonas aeruginosa) and other respiratory problems routinely seen in military personnel. Bottom gate (BG) zinc oxide (ZnO) ultra-thin film transistors (TFTs) were fabricated and functionalized with thiol-anchored aptamers as sensitive tobramycin biosensors and a Lower Detection Limit (LDL) of 0.1 nM was extracted from the adsorption coverage isotherm. Sputter deposition of ZnO allows the control of film thickness, stoichiometry, defects and interface states. Intrinsically high surface morphology of ZnO allows improved aptamer functionalization and sensitivity of detection.
关键词： tobramycin,functionalization,biosensor,sputter deposition,aptamer,cystic fibrosis,thin film transistor,ZnO
更新于2025-09-23 15:22:29
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Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
摘要： Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).
关键词： thin-film transistor (TFT),positive gate bias stress (PGBS),passivation layer,characteristic length,amorphous InGaZnO (a-IGZO)
更新于2025-09-23 15:21:21
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Vertically integrated, double stack oxide TFT layers for higha??resolution AMOLED backplane
摘要： We developed a novel vertically integrated, double stack oxide thin-film transistor (TFT) backplane for high-resolution organic light-emitting diode (OLED) displays. The first TFT layer is bulk-accumulation mode, and the second TFT layer is a single gate with back-channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm2/Vs and 0 ~ 1 V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 μm and a pitch of 18.6 μm was developed, exhibiting well shifted signal up to the last stage of 900 stages without output degradation, which could be used for 1360 ppi TFT backplane.
关键词： double stack structures,oxide,high definition,thin-film transistor (TFT),high resolution
更新于2025-09-23 15:21:01