摘要： In this work, we report the behavior of the tunneling current in a semiconductor nanostructure of (Ga, Al)As/GaAs which takes into account the behavior of the electrons and the Rashba’s spin orbit interaction in the presence of embedded quantum dots of di?erent geometries (lens, pyramid and ring) in voltage function, magnetic ?eld, and the di?erent values of the interaction spin orbit (π/2, π/4 and 3π/4). The results that were obtained show, that the intensity of the current presents appreciable changes when is changed the con?guration of the quantum dot as the intensities of external ?elds and spin polarization as well. All these internal and external e?ects that are studied in our model, signi?cantly modify the transport of information of the semiconductor nanostructure, our results show that the spin e?ects and the quantum dot con?guration contribute to the quantum memories e?ciency and the spin ?lter devices of actual use on nanoscience and nanotechnology.