研究目的
Investigating the effect of different AlGaN electron blocking layers on the optical characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs).
研究成果
The study concludes that multi-layer EBL structures, particularly the five-layer EBL, significantly improve the optical characteristics of GaN-based VCSELs by reducing electron leakage. This results in lower threshold current density and higher power and slope efficiency, making the five-layer EBL the optimal choice for practical applications.
研究不足
The study is based on simulation results, which may not fully capture all real-world manufacturing and operational challenges. The complexity of growing epitaxial structures with multiple EBL layers is noted as a potential limitation.
1：Experimental Design and Method Selection:
The study uses the photonic integrated circuit simulator in three-dimensional (PICS3D) to simulate the electrical and optical characteristics of VCSELs with different EBL structures.
2：Sample Selection and Data Sources:
The study focuses on InGaN-GaN VCSELs, specifically a 403 nm VCSEL designed and fabricated earlier.
3：List of Experimental Equipment and Materials:
The simulation involves AlGaN electron blocking layers with varying numbers of layers (single, three, five, and seven layers).
4：Experimental Procedures and Operational Workflow:
The simulation compares the electron and hole concentrations, voltage-current (V-I), and power-current (P-I) characteristics of VCSELs with different EBL structures.
5：Data Analysis Methods:
The analysis focuses on the reduction of electron leakage and improvement in optical characteristics such as threshold current, power, and slope efficiency.
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