研究目的
Investigating the strain-induced control of single GaAs/AlGaAs quantum dots integrated into semiconductor micropillar cavities for precise energy control of individual single GaAs QD excitons under multi-modal stress fields.
研究成果
The study demonstrates full frequency control of strain-free GaAs QDs embedded in micropillar cavity SPSs, fine-tuning the QD excitonic energy with cross-sectional shift rates of few meV/μm. The tuning/positioning precision of the quantum confinement energy is limited to 5% by varying shapes and compositions of the QDs, providing practical margins for GaAs QD tuning and improving the source performances of QD SPS applications.
研究不足
The study is theoretical, focusing on calculations and simulations without experimental validation. The practical quantum error margins are estimated based on theoretical models.
