研究目的
Investigating the internal physical processes that cause the low power conversion efficiency (PCE) of GaN-based superluminescent light-emitting diodes (SLEDs).
研究成果
The power conversion efficiency of GaN-based SLEDs is severely limited by the low conductivity of p-doped waveguide layers and higher quantum well carrier density, leading to enhanced Auger recombination. Efficiency enhancements can be achieved by enlarging the active volume of the SLED.
研究不足
The study is based on numerical simulations, which may not fully capture all real-world physical phenomena. Practical SLEDs always exhibit a small residual front facet reflectivity, making the peak PCE hard to reach experimentally. The analysis is limited to GaN-based SLEDs at a specific wavelength (405 nm).
1：Experimental Design and Method Selection:
The study utilizes advanced numerical device simulation to investigate the internal physical processes in GaN-based SLEDs. The same model and parameters as in a recent simulation of 405 nm InGaN/GaN laser diodes are employed for comparison.
2：Sample Selection and Data Sources:
The layer structure of the example device is detailed, featuring two InGaN/GaN quantum wells sandwiched between GaN waveguide layers and AlGaN cladding layers.
3：List of Experimental Equipment and Materials:
The commercial laser simulation software PICS3D by Crosslight Software Inc. is used, which combines carrier transport, quantum well band structure, photon emission, wave guiding, and heat flow.
4：Experimental Procedures and Operational Workflow:
The simulation involves reducing the front facet reflectivity to zero to transform a laser into an SLED, analyzing the impact on efficiency and internal processes.
5：Data Analysis Methods:
The analysis includes comparing output power, bias, and efficiencies between SLED and laser diodes, focusing on internal quantum efficiency and Auger recombination.
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