研究目的
Investigating the effects of a facile intermediate engineering technique using FABr solution on the quality and performance of mixed-cation mixed-halide perovskite solar cells.
研究成果
The FABr-treatment technique effectively improves the grain size, morphology, and crystallization of mixed-cation mixed-halide perovskite films, leading to reduced defect density and enhanced photovoltaic performance. The champion PSC achieves a power conversion efficiency of 20.08% and shows improved stability, suggesting the potential for commercialized production of high-performance PSCs.
研究不足
The study focuses on the effects of FABr-treatment on the quality and performance of mixed-cation mixed-halide perovskite solar cells, but does not explore the scalability of the technique for industrial production or the long-term stability under various environmental conditions beyond 1248 hours.
1:Experimental Design and Method Selection:
The study employs a facile intermediate engineering technique involving FABr-treatment of underdeveloped MAI perovskite intermediate film to achieve stable mixed perovskite with large grain size, highly-crystalline orientation, and decreased trap-density.
2:Sample Selection and Data Sources:
The samples are prepared by spin-coating a mixed solution of PbI2 and MAI in DMSO and DMF on FTO/SnO2 substrates, followed by treatment with FABr in IPA solution at different concentrations.
3:List of Experimental Equipment and Materials:
SEM, AFM, XRD, UV–vis absorption spectroscopy, TR-PL, PL, SCLC, EIS, and J-V characterization techniques are used. Materials include PbI2, MAI, FABr, DMSO, DMF, IPA, and CB.
4:Experimental Procedures and Operational Workflow:
The perovskite film is prepared by spin-coating the mixed solution, followed by FABr treatment and annealing. The devices are fabricated with a structure of glass/FTO/SnO2/perovskite/spiro-OMeTAD/gold.
5:Data Analysis Methods:
The performance of the PSCs is analyzed using J-V curves, IPCE spectra, and stability tests under ambient conditions.
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SEM
Characterization of film texture
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AFM
Characterization of film texture
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XRD
Examination of crystal structure properties
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UV–vis absorption spectroscopy
Measurement of photo-physical response
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TR-PL
Characterization of optoelectronic changes
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PL
Characterization of optoelectronic changes
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SCLC
Investigation of the density of the trap state
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EIS
Exploration of the dynamics of charge carrier recombination
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J-V characterization
Measurement of photovoltaic performance
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