研究目的
Investigating the performance of silicon-based positive-intrinsic-negative (PIN) photodiode irradiated by millisecond pulse laser, including the time distribution of output current under different bias voltages, energy densities, and pulse widths.
研究成果
The output current process of PIN photodiode irradiated by millisecond laser can be divided into three stages: photo-generated current stage, conduction stage, and recovery stage. The simulation results were consistent with the experiment results, providing a basis for further application of photodiode in some fields.
研究不足
The study focuses on the online output current induced by millisecond laser in silicon-based PIN photodiode, without detailed exploration of permanent damage mechanisms or long-term performance degradation.
1：Experimental Design and Method Selection:
The study established a physical model of output current for 1064 nm millisecond pulse laser irradiating silicon-based PIN photodiode based on the photoelectric effect.
2：Sample Selection and Data Sources:
The PIN photodiode studied has a three-layer structure of P+-I-N+.
3：List of Experimental Equipment and Materials:
A 1064 nm Q-switched Nd: YAG laser operating at a repetition rate of 10 Hz was used as the laser source.
4：Experimental Procedures and Operational Workflow:
The laser went through an energy attenuator and a beam splitter, with the reflecting part detected by an energy meter and the transmitting part focused by a converging lens.
5：Data Analysis Methods:
The output current under different conditions was calculated and compared with experimental results.
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