摘要： Understanding the transport loss and the ways to improving opto-electronic properties of the charge transporting layers is critical to fabricate highly efficient, long-term stable, and hysteresis-free perovskite solar cells (PSCs). Herein, we report success in suppressing hysteresis and boosting the performance of operationally stable planar solar cells using ruthenium (Ru) doped tin oxide (SnO2) electron transport layer (ETL) and Zn-TFSI2 doped spiro-OMeTAD hole transport layer (HTL). Apparently, the incorporation of Ru drastically shifted the Fermi level of SnO2 ETL upward, which provides a facile route to tailor the ETL/perovskite band-offset to improve built-in electric field of devices for improving VOC and electron extraction, simultaneously. Meanwhile, rapid injection of the photo-generated electrons from perovskite into ETL with reduced trap density is also observed when Ru doped SnO2 is employed as ETL. On the other hand, the conception of Zn-TFSI2 incorporation into HTL not only further boost the photovoltaic performance but also prolong the photo-stability of the devices. Consequently, a breakthrough efficiency of 22% (average 21.8%) with JSC of 24.6 mA cm?2, VOC of 1.15 V and FF of 0.78 has been obtained in planar-type PSCs with a loss in efficiency of only ~3% at maximum power point tracking (MPPT) over 2000?h.