研究目的
Investigating the synthesis and ferroelectric properties of gradient doped Y2O3:HfO2 thin films grown by pulsed laser deposition.
研究成果
The study successfully synthesized ferroelectric HYO thin films with a remanent polarization of 10.5 μC/cm2 and a dielectric constant of 27 using gradient doping via PLD. The films exhibited good stability and ferroelectric properties, making them promising for high-performance nanoelectronics.
研究不足
The study focuses on the synthesis and characterization of HYO thin films but does not explore their integration into functional devices or long-term stability under operational conditions.
1：Experimental Design and Method Selection:
The HYO thin film was synthesized by alternately depositing HfO2 and Y2O3 ceramic targets using pulsed laser deposition (PLD). The substrate temperature was maintained at 250°C, with an oxygen pressure of
2：155 mbar and a flow rate of 5 sccm. The laser pulse frequencies on HfO2 and Y2O3 ceramic targets were 5 Hz and 2 Hz, respectively. Sample Selection and Data Sources:
The HYO film was deposited on a TiN (40 nm) bottom electrode. Postdeposition annealing was performed in a rapid thermal annealing furnace with a N2 atmosphere at 530°C for 60 s.
3：List of Experimental Equipment and Materials:
Hafnium oxide (HfO2) and yttrium oxide (Y2O3) ceramic targets (Alfa Aesar,
4：99%), KrF excimer laser (248 nm), high-resolution diffractometer (SmartLab, Rigaku), high-resolution transmission electron microscope (HRTEM), X-ray photoelectron spectroscopy (XPS) (Thermo Fisher Scientific K-Alpha), Radiant Precision LC system, Agilent E4980A precision LCR meter, MFP-3D (Asylum Research, Oxford) for PFM studies. Experimental Procedures and Operational Workflow:
The HYO film was postannealed, and 30×30 μm2 array squares were exposed by ultraviolet lithography. The upper electrode [Cr (30 nm)/Au (15 nm)] was grown by thermal evaporation.
5：Data Analysis Methods:
Grazing incidence x-ray diffraction (GI-XRD), scanning transmission electron microscopy (STEM), energy-dispersive spectroscopy (EDS), XPS, P-E hysteresis loops, capacitance-voltage (C-V) measurements, and PFM were used to analyze the film's properties.
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High-resolution diffractometer
SmartLab
Rigaku
Used for grazing incidence x-ray diffraction (GI-XRD) measurements.
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X-ray photoelectron spectroscopy
K-Alpha
Thermo Fisher Scientific
Used for investigating the chemical state and bonding environment of the HYO thin film.
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Precision LCR meter
E4980A
Agilent
Used for measuring the frequency dependence of capacitance (C-f) and capacitance vs voltage (C-V).
E4980A/E4980AL Precision LCR Meter
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Hafnium oxide
HfO2
Alfa Aesar
Used as a ceramic target for pulsed laser deposition to synthesize the HYO thin film.
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Yttrium oxide
Y2O3
Alfa Aesar
Used as a ceramic target for pulsed laser deposition to synthesize the HYO thin film.
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KrF excimer laser
Used for pulsed laser deposition with a wavelength of 248 nm and a fluence of 2 J/cm2.
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High-resolution transmission electron microscope
HRTEM
Used for analyzing the cross-sectional structure of the film.
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Precision LC system
Radiant
Used for investigating the P-E hysteresis loop of the HYO capacitor.
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Piezoelectric force microscopy
MFP-3D
Asylum Research, Oxford
Used for characterizing local polarization switching of ultrathin ferroelectric thin films.
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