研究目的
Investigating the effectiveness of post-deposition catalytic-doping (cat-doping) on various doped silicon alloys for the use in silicon heterojunction solar cells.
研究成果
Phosphorous cat-doping was applied to three different silicon alloys. The results show that phosphorous atoms were incorporated into μc-Si:H(n), nc-SiOx:H(n), and μc-SiC:H(n) but with different signi?cance in terms of doping depth and conductivity. Cat-doping might become more important to tune the properties of interfaces for high-ef?ciency SHJ cells that cannot be improved otherwise.
研究不足
The correlation between effectiveness of cat-doping and microstructure of the material is yet not clear. The determination of the fraction between active and inactive cat-doped P atoms is still under investigation.
1：Experimental Design and Method Selection:
The study investigates the effectiveness of post-deposition catalytic-doping (cat-doping) on various doped silicon alloys using secondary ion mass spectrometry (SIMS) to reveal the P distribution and its difference in these three silicon alloy ?lms.
2：Sample Selection and Data Sources:
Samples of microcrystalline silicon (μc-Si:H), nanocrystalline silicon oxide (nc-SiOx:H), and microcrystalline silicon carbide (μc-SiC:H) were used.
3：List of Experimental Equipment and Materials:
Secondary ion mass spectrometry (SIMS), plasma-enhanced chemical vapor deposition (PECVD), hot-wire chemical vapor deposition (HWCVD) system.
4：Experimental Procedures and Operational Workflow:
The P cat-doping process was carried out on both sides of the samples on the surfaces of the silicon alloys. Effective lifetimes of all the samples were measured before and after P cat-doping.
5：Data Analysis Methods:
The impact of cat-doping on electrical property of silicon alloy ?lms was evaluated from conductivity measurement.
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