研究目的
Investigating the photoelectric properties of SnO2: Ag/P–Si heterojunction photodetector, focusing on the effects of Ag doping on the film's electrical and optical properties.
研究成果
The study successfully demonstrated that Ag doping improves the photoelectric properties of SnO2: Ag/P–Si heterojunction photodetectors, with enhanced responsivity, quantum efficiency, and specific detectivity. The best performance was observed with an Ag doping ratio of 0.03.
研究不足
The study focuses on the effects of Ag doping on SnO2 films and their application in photodetectors, but does not explore other dopants or alternative fabrication methods that might offer different advantages.
1：Experimental Design and Method Selection
Thermal evaporation method for preparing SnO2 thin films, doping with Ag at different rates, and using AFM for surface morphology analysis.
2：Sample Selection and Data Sources
P-type Si wafer (111) crystalline orientation used as substrates, cleaned and prepared for film deposition.
3：List of Experimental Equipment and Materials
Edward coating unit (E 306), Scanning probe Microscope (AA3000), Vander Pauw (HMS-3000), HUIER DC power supply (ps-1502DD), digital Multimeter, monochrometer, Halogen lamp (Philips).
4：Experimental Procedures and Operational Workflow
Deposition of SnO2 films by thermal evaporation, doping with Ag, oxidation in an electrical furnace, AFM and Hall measurements for characterization, I–V characteristics measurement under different power densities.
5：Data Analysis Methods
Analysis of AFM images for grain size and roughness, Hall measurements for electrical properties, and spectral response analysis for photodetector performance.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
