研究目的
To develop a high efficiency TADF emitter, HETBu, for high EQE TADF OLEDs by suppressing concentration quenching effect caused by strong intermolecular interaction.
研究成果
The HETBu emitter with peripheral t-butyl units achieved high EQE of 32.6% and high power efficiency over 100 lm/W in TADF devices at a very low doping concentration of 1%. The design effectively suppressed concentration quenching and improved device lifetime, outperforming previous emitters like HAP-3TPA.
研究不足
The study focuses on the suppression of concentration quenching effects in TADF OLEDs but does not extensively explore the scalability or cost-effectiveness of the synthesis process for industrial applications.
1：Experimental Design and Method Selection:
A molecular design with t-butyl groups surrounding a donor-acceptor type core structure was developed. The heptazine was used as a rigid acceptor and a di((di-t-butyl)phenyl)amine as a donor with protecting groups.
2：Sample Selection and Data Sources:
The HETBu emitter was synthesized and its performance was compared with the HAP-3TPA emitter.
3：List of Experimental Equipment and Materials:
The synthesis involved a chlorinated heptazine core and di((di-t-butyl)phenyl)amine donor. Device fabrication used PBICT host with bipolar charge transport character.
4：Experimental Procedures and Operational Workflow:
The HETBu emitter was doped at concentrations of 1, 3, 5, and 20% in the PBICT host to investigate the doping concentration effect on device performances.
5：Data Analysis Methods:
The photophysical properties were studied by UV–vis absorption, PL emission spectra, transient PL experiment, and cyclic voltammetry. Device performances were evaluated by current density, luminance, EQE, and power efficiency measurements.
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