研究目的
Investigating the effects of inductively coupled Ar plasma etching (ICP-Ar) on the performance of CdZnTe detectors compared to traditional Br–MeOH etching.
研究成果
ICP-Ar etching is a safer, more environmentally friendly alternative to Br–MeOH wet etching for CdZnTe surface treatment, offering improved surface composition closer to stoichiometric ratio, reduced leakage current, and enhanced detector performance. The optimal ICP-Ar etching parameters were identified, suggesting its potential to replace traditional wet etching methods.
研究不足
The study focuses on (111) face CdZnTe wafers and may not be directly applicable to other crystal orientations. The environmental and safety benefits of ICP-Ar etching are highlighted, but the study does not explore the long-term stability of ICP-Ar treated surfaces.
1：Experimental Design and Method Selection:
The study compares ICP-Ar physical etching with traditional Br–MeOH wet etching on CdZnTe detectors. The optimal ICP-Ar etching parameters were determined through experiments.
2：Sample Selection and Data Sources:
Three adjacent (111) face Cd0.9Zn0.1Te wafers were used, each subjected to different surface treatments.
3：9Zn1Te wafers were used, each subjected to different surface treatments.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: ICP-8101 plasma etching system, Logitech PM6 polisher, X-ray photoelectron spectroscopy (XPS, Thermo ESCALAB 250XI), atomic force microscopy (AFM, NanoManVS), KEITHLEY 2400 for I–V measurements.
4：Experimental Procedures and Operational Workflow:
Samples were mechanically polished, then subjected to either Br–MeOH wet etching or ICP-Ar physical etching under varying RF powers. Surface composition, roughness, and detector performance were analyzed.
5：Data Analysis Methods:
XPS for surface composition, AFM for surface roughness, I–V curves for electrical properties, and energy spectrum tests for detector performance.
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