研究目的

The aim of this work was to prepare Sn1?xMgxO thin films using the chemical spray pyrolysis technique, where the thin films were then exposed to gamma rays with energies 1.332 MeV and 1.173 MeV emitted from a Co-60 radioactivity source. The proper dosimeters were used to determine the radiation levels in the environment, and the effect of the irradiation upon the structure properties and the optical properties of the Sn1?xMgxO thin films were investigated using x-ray diffraction, atomic force microscopy and energy dispersive x-ray spectroscopy.

研究成果

In this paper, the structural analysis of Sn1?xMgxO thin films via x-ray diffraction revealed polycrystalline samples with tetragonal structures. The average crystallite size and the lattice constants were both found to decrease with Mg concentration for all measured Mg concentrations. Further, the structural parameters, dislocation density and crystallite density increased with increasing Mg doping; while the texture coefficient (Tc) values were greater than one. Following gamma ray irradiation of the Sn1?xMgxO thin films, the optical band gap values and transmittance were found to decrease, while optical constants such as the extinction coefficient and dielectric constants were found to increase. The EDS analysis showed the dominant composition of the Sn1?xMgxO films for all samples are Sn (Ka, La) and O (Ka).

研究不足

The study is limited to the effects of gamma ray irradiation on Sn1?xMgxO thin films prepared by chemical spray pyrolysis. The research does not explore other deposition techniques or irradiation sources. Additionally, the study focuses on a specific range of Mg doping concentrations (0% to 8%) and does not investigate the effects beyond this range.