摘要： Featuring an absence of dangling bonds, large band gap, low dielectric constant, excellent chemical inertness, atomically thin hexagonal boron nitride (h-BN) is considered as an ideal candidate for the integration with graphene and other 2D materials. During the past years, great efforts have been devoted to the research area of h-BN based heterostructures from fundamental study to practical applications. In this review, we summarize the recent progress in the synthesis, novel properties and potential applications of h-BN based heterostructures, especially the synthesis technique. Firstly, various approaches for the preparation of both in-plane and vertical stacked h-BN based heterostructures are introduced in detail, including top-down strategies associated with exfoliation-transfer processes and bottom-up strategies such as chemical vapor deposition (CVD)-based growth. Secondly, we discuss some novel properties arise in these heterostructures. Then, several promising applications in electronic and optoelectronic devices based on these heterostructures are also reviewed. Finally, we discuss the main challenges and possible research directions in this field.