研究目的
Investigating the performance enhancement of CMOS-MEMS thermoelectric infrared sensors through the design of an umbrella-like structure as an IR absorber and the selection of sensing materials with higher Seebeck coefficients.
研究成果
The proposed CMOS-MEMS thermoelectric infrared sensor design with an umbrella-like absorber and poly-Si (N+/P+) without Silicide as the sensing material significantly enhances the sensor's performance, with a 2-2.6 fold increase in Detectivity at 200mtorr. The design's advantages are more pronounced with reduced sensor size, indicating potential for further miniaturization and performance improvement.
研究不足
The study is limited by the design rules of the TSMC 0.18μm 1P6M standard CMOS process and the available thin film materials. The performance enhancement is more significant under vacuum conditions, suggesting potential limitations in ambient pressure applications.
1：Experimental Design and Method Selection:
The study employs the TSMC
2：18μm 1P6M standard CMOS process for fabrication, focusing on the design of an umbrella-like absorber structure and the evaluation of poly-Si films with and without Silicide as sensing materials. Sample Selection and Data Sources:
The study uses poly-Si (N+/P+) films with and without Silicide, characterized for their Seebeck coefficients.
3：List of Experimental Equipment and Materials:
Includes the TSMC
4：18μm 1P6M standard CMOS process, in-house post-CMOS MEMS processes, and materials like poly-Si and Silicide. Experimental Procedures and Operational Workflow:
Fabrication involves standard CMOS processes followed by post-CMOS MEMS processes to form MEMS structures. Measurements include responsivity, response time, and field of view under different ambient pressures.
5：Data Analysis Methods:
The study analyzes the responsivity, noise equivalent power (NEP), and detectivity (D*) of the sensors, comparing proposed and reference designs.
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