研究目的
Investigating the fabrication and performance of a novel thermopile-based infrared (IR) sensor array on a single CMOS dielectric membrane for people presence sensing.
研究成果
The study demonstrates a CMOS thermopile-based IR sensor array fabricated on a single SiO2 dielectric membrane, showing low crosstalk (<2%), enhanced optical absorption in the 8–14 μm band, and a responsivity of 36 V/W, making it suitable for people presence and gesture detection in low-cost applications. Vacuum packaging and high emissivity coating could further enhance responsivity.
研究不足
The study notes that optical absorption could be further enhanced by the addition of a high emissivity coating, such as a gold black layer, at the expense of an extra processing step. Additionally, arrays with smaller pixel areas show a drop in responsivity due to the reduced conversion efficiency of each pixel.
1：Experimental Design and Method Selection:
The study focuses on the fabrication of a thermopile-based IR sensor array on a single CMOS dielectric membrane using standard CMOS Al metal layers for heatsinking.
2：Sample Selection and Data Sources:
The devices were fabricated using a commercial
3：35 μm CMOS process on 6 inch Si wafers, with array sizes of 8 × 8, 24 × 24, 60 × 60, and 100 × 100 pixels. List of Experimental Equipment and Materials:
The setup included a blackbody source (Fluke 4180), an analogue-front-end integrated circuit (LMP93601), and an Arduino microcontroller board for measurement purposes.
4：Experimental Procedures and Operational Workflow:
The device was mounted in an open surface mount Quad-Flat No-leads (QFN) type package, with the individual pixels electrically bonded and addressed using a multiplexer.
5：Data Analysis Methods:
The responsivity and thermal crosstalk were measured, and the optical absorption spectrum was analyzed using FTIR spectroscopy.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
