研究目的
Investigating the enhancement of the channel electric field and effective electron velocity in AlGaN/GaN multi-nanochannel high electron mobility transistors (HEMTs).
研究成果
The MNC HEMT exhibits significantly higher effective electron velocity due to the formation of a high electric field in the nanochannel, which is close to the peak saturation velocity in GaN. This finding is crucial for improving the performance of AlGaN/GaN HEMTs and understanding electron transport in 3D nanochannel structures.
研究不足
The study is limited to AlGaN/GaN HEMTs fabricated on sapphire substrates. The enhancement mechanisms may vary with different substrate materials or device architectures.
1：Experimental Design and Method Selection:
The study involved fabricating AlGaN/GaN MNC HEMTs on sapphire substrates and comparing their drain current properties with conventional planar devices. 3D simulations using TCAD Sentaurus software were performed to understand the electric field and electron velocity distribution.
2：Sample Selection and Data Sources:
Al0.27Ga0.73N/GaN heterostructures grown by metal organic chemical vapor deposition on a (0001) sapphire substrate were used.
3：27Ga73N/GaN heterostructures grown by metal organic chemical vapor deposition on a (0001) sapphire substrate were used.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Reactive ion-beam etching, electron beam lithography, atomic layer deposition (ALD) system, Ti/Al/Ti/Au multilayer for ohmic contacts, Ni/Au gate electrode.
4：Experimental Procedures and Operational Workflow:
Fabrication involved forming a SiO2 mask pattern, reactive ion-beam etching to form periodic trenches, deposition of ohmic contacts, gate electrode fabrication, and passivation with Al2O
5：Data Analysis Methods:
The study compared experimental and simulated transfer characteristics and calculated the effective electron velocity using the distribution of the electric field strength.
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