研究目的
Investigating the use of Monolithic Active Pixel Sensors (MAPS) fabricated using a standard low voltage, high resistivity substrate 180 nm CMOS technology for tracking and vertexing in High Energy Physics (HEP) applications.
研究成果
Initial test results show a drastic decrease in efficiency of charge collection for fast neutrons fluence of 1014 cm2. Developing of detailed TCAD simulations will continue alongside the testing of the OVERMOS structures.
研究不足
The main issue preventing MAPS from being more widely implemented in HEP experiments is their radiation hardness. The creation of silicon crystal defects, a consequence of exposure to heavy particles fluence, reduces the recombination time of minority carriers.
1：Experimental Design and Method Selection:
The project investigates the radiation hardness and implements TCAD modelling of CMOS MAPS.
2：Sample Selection and Data Sources:
OVERMOS devices were irradiated with neutrons using the TRIGA reactor facility at Ljubljana to fluences of 1013, 5?1013, 1014 and 5?1014 cm?
3：List of Experimental Equipment and Materials:
A pulsed laser operating at 1064 nm and 4 ns pulse width, with a beam size of 5 × 5 μm2, was used for charge injection.
4：Experimental Procedures and Operational Workflow:
Charge collection in OVERMOS was investigated using laser injection method. The output of the charge amplifier was sampled using an oscilloscope, a LeCroy WaveRunner
5：Data Analysis Methods:
62 The output was further processed to filter out the high frequency noise components due to the firing of the laser.
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