研究目的
Investigating the effect of surface treatment on the electrical characteristics of printed Ag Schottky contacts on n-GaN epitaxial layers using Ag nanoink.
研究成果
The HCl surface treatment provided better I–V characteristics and a higher Schottky barrier height than the organic solvent treatment. SIPM demonstrated higher uniformity for HCl-treated samples, indicating the effectiveness of HCl in removing surface oxide layers even when printed and annealed in air. SIPM is a powerful tool for visualizing inhomogeneity over printed electrodes.
研究不足
The study is limited to the characterization of Ag Schottky contacts on n-GaN epitaxial layers with specific surface treatments. The uniformity, stability, and reliability of printed electrodes are identified as areas requiring further optimization.
1：Experimental Design and Method Selection:
The study involved the formation of Ag Schottky contacts on n-GaN epitaxial layers using Ag nanoink with two types of surface treatments (HCl and organic solvent). The electrical characteristics were analyzed using current–voltage (I–V) measurements and scanning internal photoemission microscopy (SIPM).
2：Sample Selection and Data Sources:
Epitaxial layers grown by metal organic vapor phase epitaxy on a sapphire substrate were used. The samples were prepared with two types of final surface treatments.
3：List of Experimental Equipment and Materials:
A needle-type dispenser was used for printing Ag nanoink. The samples were annealed at 400 °C for 30 min in air. A semiconductor parameter analyzer (HP4142B) was used for I–V measurements.
4：Experimental Procedures and Operational Workflow:
The Ag nanoink was printed on freshly treated substrates, annealed, and then characterized using I–V and SIPM measurements.
5：Data Analysis Methods:
The Schottky barrier height and ideality factor were determined using the thermionic emission model. SIPM was used for two-dimensional characterization of the electrical characteristics.
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