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Thickness dependence of structural, morphological and optical properties of Mn-Co-Ni-O thin films grown by chemical solution deposition on SiO2/Si(100) substrate

DOI:10.1016/j.apsusc.2019.01.127 期刊:Applied Surface Science 出版年份:2019 更新时间:2025-09-23 15:22:29
摘要: Mn1.56Co0.96Ni0.48O4 (MCNO) thin film with different thicknesses ranging from 180 nm to 600 nm were deposited onto a SiO2/Si(100) substrate at 600 °C by using the chemical solution deposition method. The thickness dependent structural and optical properties of the MCNO films were investigated in this study. As identified by the SEM pictures and X-ray diffraction (XRD) spectra, all samples showed polycrystalline cubic spinel structure, and the stoichiometric status is improved with growing thickness according to XRD results. Spectroscopic ellipsometry spectra were measured in this study to investigate the thickness dependent optical properties of MCNO film in the range of 300-1000 nm. The samples showed three absorption structures locating at 1.6-1.9 eV, 2.6 eV, and above 3.5 eV, corresponding to the charge transfer transition involving 2p orbitals of O2- and 3d orbitals of Mn and Co ions, respectively. The absorption structure at above 3.5 eV decreases gradually as the thickness grows, while the peak around 1.6-1.9 eV weakens slightly before it enhances again with film thickness above 430 nm, which can be explained by a combined effect of crystallinity improvement and increase in Mn4+/Mn3+ ratio.
作者: W. Zhou,C.Y. Wu,Y.M. Ying,Y. Liu,Z.M. Huang
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To investigate the thickness dependent optical properties of MCNO thin films grown on SiO2/Si(100) substrate by chemical solution deposition, specifically to clarify the vis-near infrared absorption mechanism and discuss the thickness dependence of structural and optical properties.

The study demonstrates that MCNO films exhibit polycrystalline cubic spinel structure with improved stoichiometry as thickness increases. Optical properties show three absorption peaks attributed to charge transfer transitions, with thickness-dependent variations explained by changes in Mn4+/Mn3+ ratio and crystallinity. This aids in silicon integration for applications like bolometers.

The study is limited to films up to 600 nm thickness; thicker films (e.g., 750-900 nm) are not fully characterized. Mismatch between MCNO film and Si substrate (lattice and thermal expansion) affects microstructure, and buffer layers are suggested for future optimization. The optical analysis is confined to the 300-1000 nm range.

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