研究目的

Reviewing the most recent advances of β-Ga2O3 based power devices, including material properties, growth techniques, device performance, and potential solutions to challenges.

研究成果

Significant progresses have been achieved with remarkable power device performances even at this premature development stage, such as BV more than 3 kV of lateral Schottky Rectifiers, high current density 1.5/1 A/mm of D/E-modes FETs, BV of 1.8 kV for field-plated lateral MOSFET and fT/fmax of 5.1/17.1 GHz, respectively. In addition to device performance, sufficient low defect density less than 103 cm?2 of melt-grown native substrate and very smooth surface with RMS roughness less than 0.5 nm of epitaxial β-Ga2O3 thin film on its native substrate have all been demonstrated. However, some open questions about how to realize p-type β-Ga2O3 and how to resolve the low thermal conductivity issue are yet to be established. Once resolving those aforementioned issues, the bright future of β-Ga2O3 devices as power electronic products are definitely coming soon.

研究不足

The paper is a review and does not conduct new experiments, so it does not have experimental limitations. However, it discusses challenges such as p-type doping difficulties and low thermal conductivity in β-Ga2O3 devices.