研究目的
To map the growth window (temperature, oxygen pressure, and film thickness) for epitaxial stabilization of the ferroelectric phase in Hf0.5Zr0.5O2 thin films and investigate their structural and ferroelectric properties.
研究成果
The growth window for epitaxial Hf0.5Zr0.5O2 films was mapped, showing that deposition parameters and thickness control the orthorhombic phase amount and lattice strain, enabling tailoring of ferroelectric properties. The EC - t-2/3 scaling was observed for the first time in hafnia, indicating high-quality films suitable for further research and device applications.
研究不足
The study is limited to epitaxial films on specific substrates (SrTiO3 with LSMO electrodes), and the effects of other dopants or substrates are not explored. Leakage mechanisms are not fully elucidated, and the scaling behavior may not generalize to all ferroelectric hafnia films.
1：Experimental Design and Method Selection:
Hf0.5Zr0.5O2 films were grown by pulsed laser deposition (PLD) on SrTiO3 substrates with La2/3Sr1/3MnO3 bottom electrodes. Three series of samples were prepared by varying deposition temperature (Ts-series), oxygen pressure (PO2-series), and film thickness (t-series).
2：5Zr5O2 films were grown by pulsed laser deposition (PLD) on SrTiO3 substrates with La2/3Sr1/3MnO3 bottom electrodes. Three series of samples were prepared by varying deposition temperature (Ts-series), oxygen pressure (PO2-series), and film thickness (t-series).
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Films were deposited with specific parameters: Ts from 650 to 825 °C, PO2 from 0.01 to 0.2 mbar, and thickness from 2.3 to 37 nm. Data were obtained from structural and electrical characterizations.
3：01 to 2 mbar, and thickness from 3 to 37 nm. Data were obtained from structural and electrical characterizations.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Pulsed laser deposition system (248 nm wavelength), X-ray diffraction (XRD) with Cu Kα radiation, atomic force microscopy (AFM), dc magnetron sputtering for top electrodes, AixACCT TFAnalyser2000 for electrical measurements.
4：Experimental Procedures and Operational Workflow:
Films were deposited at specified temperatures and pressures, cooled under oxygen, characterized by XRD and AFM, and electrical properties measured with top-bottom electrode configuration using dynamic leakage current compensation.
5：Data Analysis Methods:
XRD data analyzed for phase identification and lattice parameters, AFM for surface roughness, electrical measurements for polarization, coercive field, and leakage current, with statistical analysis of dependencies.
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