研究目的
To address the poor charge separation and slow water oxidation kinetics of hematite (α-Fe2O3) photoanodes by constructing a p–n heterojunction with Co3O4 and modifying with Co-Pi cocatalyst for enhanced photoelectrochemical water oxidation performance.
研究成果
The Co-Pi/Co3O4/Ti:Fe2O3 photoanode demonstrates superior PEC performance due to efficient charge separation and transportation facilitated by the p–n heterojunction and Co-Pi cocatalyst, with high photocurrent density, low onset potential, and good stability, offering a reliable approach for solar water splitting.
研究不足
The study may be limited by the specific conditions used (e.g., aqueous alkaline environment, specific doping levels), and scalability or cost considerations for large-scale applications are not addressed. Optimization might be needed for different electrolytes or light sources.
1:Experimental Design and Method Selection:
The study involves designing a p–n heterojunction photoanode by coupling p-type Co3O4 with n-type Ti-doped Fe2O3 (Ti:Fe2O3) nanorod arrays, followed by deposition of Co-Pi cocatalyst. Methods include hydrothermal synthesis, galvanostatic electrodeposition, annealing, and photo-assisted electrodeposition.
2:Sample Selection and Data Sources:
Ti:Fe2O3 is synthesized on FTO glass substrate, with optimization of Ti doping concentration and Co3O4 loading. Data are obtained from PEC measurements in 1 M KOH electrolyte under AM
3:5G illumination. List of Experimental Equipment and Materials:
Equipment includes FESEM, TEM, HRTEM, STEM-EDX, XRD, XPS, Raman spectrometer, UV-vis DRS, M–S plot setup, OCP decay setup, SPV and TPV measurement systems, EIS setup. Materials include Co(NO3)2, KOH, Na2SO3, FTO glass.
4:Experimental Procedures and Operational Workflow:
Ti:Fe2O3 is hydrothermally synthesized, Co3O4 is electrodeposited and annealed, Co-Pi is deposited via photo-assisted electrodeposition. PEC performances are evaluated using LSV, I-t curves, IPCE, ABPE, APCE, EIS, and stability tests.
5:Data Analysis Methods:
Data are analyzed using equivalent circuit fitting for EIS, calculation of carrier lifetimes from OCP decay, and efficiency calculations from photocurrent and light absorption data.
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FESEM
Imaging the morphology of samples
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TEM
Transmission electron microscopy for detailed imaging
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HRTEM
High-resolution TEM for lattice imaging
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STEM-EDX
Energy-dispersive X-ray spectroscopy for elemental analysis
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XRD
X-ray diffraction for phase identification
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XPS
X-ray photoelectron spectroscopy for composition analysis
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Raman spectrometer
Raman spectroscopy for molecular analysis
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UV-vis DRS
Ultraviolet-visible diffuse reflectance spectroscopy for bandgap measurement
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M–S plot setup
Mott-Schottky analysis for semiconductor properties
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OCP decay setup
Open-circuit potential decay measurement
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SPV measurement system
Surface photovoltage measurement
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TPV measurement system
Transient photovoltage measurement
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EIS setup
Electrochemical impedance spectroscopy for charge transfer analysis
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FTO glass
Fluorine-doped tin oxide substrate for electrode fabrication
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