研究目的
To fabricate C8-BTBT single crystals by solution coating and photo-alignment method and evaluate their OFET characteristics, investigating anisotropic transistor characteristics including field-effect mobility in each crystalline axis.
研究成果
The study successfully fabricated directionally-controlled C8-BTBT single crystals using liquid crystal solvent and photo-alignment films, demonstrating anisotropic electrical characteristics with higher mobility along the b-axis. This technique can suppress variation in organic transistor characteristics and is promising for applications like flexible displays, with future work needed on solvent removal and process integration.
研究不足
The crystal size and thickness variation may affect mobility dispersion; removal of LC solvent requires vacuum environment, which could be optimized for easier processes; single-crystal X-ray measurement was difficult due to inability to peel crystals from the substrate.
1：Experimental Design and Method Selection:
The study used a solution coating method with liquid crystal solvent (5CB) and photo-alignment films to grow single crystals of C8-BTBT, aiming to control crystalline orientation for improved OFET performance.
2：Sample Selection and Data Sources:
C8-BTBT semiconductor was blended in 5CB solvent at
3：5wt% concentration and coated on photo-alignment-treated substrates. List of Experimental Equipment and Materials:
Equipment includes spin coater (SC-155P, Oshigane Corp.), voltage/current source meter (2614B, KEITHLEY Corp.), X-ray diffractometer, atomic-force microscope, confocal-laser microscope, and vacuum evaporation system. Materials include C8-BTBT (Nippon Kayaku Corp.), 5CB solvent (LCC Co.), photo-alignment layers (TO2, Nissan Chemical Corp.), p-doped silicon substrates with SiO2, and gold electrodes.
4：Experimental Procedures and Operational Workflow:
Coat photo-alignment layers on substrates, expose to polarized UV light, spin-coat C8-BTBT/5CB mixture, transfer to vacuum to remove solvent and grow crystals, deposit gold electrodes via shadow mask, and measure electrical characteristics using a microprobe system.
5：Data Analysis Methods:
Field-effect mobility was extracted from transfer characteristics using the MOSFET model equation, with capacitance measured by an LCR meter; XRD and AFM were used for structural analysis.
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