研究目的
To synthesize and characterize the structural and electrical properties of SbXW1-XSe2 (0, 0.5) ternary alloys for potential use in high-performance optoelectronic devices.
研究成果
The synthesis of SbXW1-XSe2 ternary alloys via direct vapour transport results in 2H-hexagonal structures with tailored band gaps and n-type semiconducting behavior, demonstrating effective band gap engineering for optoelectronic applications. Future work could explore other compositions and device integration.
研究不足
The growth temperature is high, leading to potential chalcogen vacancies and deep-level defect states, which could affect device performance. The study is limited to specific compositions (X=0, 0.5) and may not cover full compositional range.
1：Experimental Design and Method Selection:
The study employed direct vapour transport technique for crystal growth, with characterization using XRD, EDAX, optical microscopy, SEM, TEM, Raman spectroscopy, electrical resistivity measurements, and Hall-effect measurements to analyze structural and electrical properties.
2：Sample Selection and Data Sources:
Crystals were grown from elemental powders of antimony (Sb), tungsten (W), and selenium (Se) with 99.999% purity in stoichiometric proportions.
3：999% purity in stoichiometric proportions. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Dual zone furnace, quartz ampoule, Rigaku Ultima XRD, Carl-Zeiss optical microscope, ESEM EDAX XL-30 SEM, Philips Tecnai-20 TEM, micro-Raman model STR 500, Hall-effect set-up Model-DHE-22, constant current source Model-DPS175, and elemental powders from Alfa Aesar.
4：Experimental Procedures and Operational Workflow:
Ampoule was evacuated and sealed, heated in a dual zone furnace to specific temperatures for 100 hours, then cooled. Grown crystals were analyzed using various techniques as described.
5：Data Analysis Methods:
XRD for structural analysis, EDAX for stoichiometry, microscopy for morphology, electrical measurements for resistivity and carrier properties, Raman for vibrational modes, and band gap calculation from transmittance spectra.
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Rigaku Ultima
Ultima
Rigaku
Used for powder X-ray diffraction analysis to determine structural properties.
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Dual zone furnace
Used for crystal growth by direct vapour transport technique, providing controlled temperature gradients.
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Quartz ampoule
Container for holding elemental powders during crystal growth, evacuated and sealed to create vacuum.
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Carl-Zeiss optical microscope
Carl-Zeiss
Used for studying surface morphology of grown crystals.
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ESEM EDAX XL-30
XL-30
ESEM EDAX
Scanning electron microscope for high-resolution morphology analysis.
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Philips Tecnai-20
Tecnai-20
Philips
Transmission electron microscope for analyzing nano-flakes and obtaining SAED patterns.
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Micro-Raman
STR 500
Used for Raman spectroscopy to confirm phase purity and vibrational modes.
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Hall-effect set-up
DHE-22
Scientific Equipment Services (SES)
Used for measuring Hall-effect parameters such as carrier concentration and mobility.
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Constant current source
DPS175
Scientific Equipment Services (SES)
Provides constant current for electrical measurements.
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Elemental powders
Alfa Aesar
Source materials for crystal growth, including antimony, tungsten, and selenium.
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