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[IEEE 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Bengaluru, India (2018.12.17-2018.12.19)] 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Optimization of controlled two-step liquid phase crystallization of Ge-on-Si
摘要： This work presents a two-step liquid phase crystallization process for realizing large-grain epitaxial germanium (Ge) on silicon substrates. The process starts with amorphous Ge films on silicon (100) substrate which is subjected to a two-step annealing process. In the first step, films are heated to 950°C for 5 minutes, a temperature above the melting point of Ge. Next the films are allowed to cool down to 930°C and maintained at that temperature for 1 to 5 hours respectively in order to check its effect on the crystallization process. The 950°C for 5 mins and 930°C for 2 hours shows the optimum annealing conditions to achieve highly crystalline films. The surface morphologies of the annealed samples were characterized using scanning electron microscopy which shows grain sizes ranging from 2-5 μm. The crystallinity of the films was confirmed using Raman spectroscopy and x-ray diffraction (XRD) measurements. Theta/2-theta XRD measurements of samples show the peak for Ge(400) at 66.3°. The degree of grain orientations along Ge(400) plane is further evaluated using the rocking curve in XRD measurements which shows full-width at half maximum height value of 0.08° (or 288 arc sec) along this plane for the optimum two-step annealing process condition.
关键词： liquid phase epitaxy,Germanium,epitaxy,Silicon,Ge-on-Si
更新于2025-09-16 10:30:52
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Semiconductor Plasma Antennas Formed by Laser Radiation
摘要： Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.
关键词： laser radiation,plasma antenna,silicon,germanium,microwave radiation,semiconductor,electron-hole plasma
更新于2025-09-16 10:30:52
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Size-Dependent Photoresponse of Germanium Nanocrystals-Metal Oxide Semiconductor Photodetector
摘要： In this article, size-dependent photoresponse characteristics and low-frequency noise behavior of high-speed germanium nanocrystals (nc-Ge) photodetector have been reported. The nc-Ge embedded in SiO2 matrix with different sizes have been synthesized by annealing the cosputtered Ge-SiO2 thin films at 800 ?C–900 ?C. It has been observed that the photoresponse of the detector increases with the increasing size of nc-Ge. The sample annealed at 900 ?C showed maximum responsivity (3.5 A/W) with the fast response time. The low-frequency noise spectral power density in the current fluctuation (SI) have been measured for the fabricated nc-Ge photodetectors, and lowest noise equivalent power (NEP) and highest detectivity (D?) have been observed in the nc-Ge detector synthesized at 900 ?C. Tunable responsivity in nc-Ge has been observed due to size-dependent light absorption, electric field-driven carrier separation, and tunneling through the oxide barriers. The transient photoresponse behavior has also been studied and the best rise time of 6.2 μs was observed for nc-Ge synthesized at 900 ?C. These results suggest that the nc-Ge are a promising contender for high-performance integrated optoelectronic devices that are fully compatible with silicon technology in terms of fabrication and thermal budget.
关键词： Detectivity,noise equivalent power (NEP),responsivity,noise spectral power,germanium nanocrystals (nc-Ge)
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon nanophotonics,optical photodetectors,complementary metal-oxide-semiconductor technology,germanium,silicon-on-insulator
更新于2025-09-16 10:30:52
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Ultrathin Nano-Absorbers in Photovoltaics: Prospects and Innovative Applications
摘要： Approaching the first terawatt of installations, photovoltaics (PV) are about to become the major source of electric power until the mid-century. The technology has proven to be long lasting and very versatile and today PV modules can be found in numerous applications. This is a great success of the entire community, but taking future growth for granted might be dangerous. Scientists have recently started to call for accelerated innovation and cost reduction. Here, we show how ultrathin absorber layers, only a few nanometers in thickness, together with strong light confinement can be used to address new applications for photovoltaics. We review the basics of this new type of solar cell and point out the requirements to the absorber layer material by optical simulation. Furthermore, we discuss innovative applications, which make use of the unique optical properties of the nano absorber solar cell architecture, such as spectrally selective PV and switchable photovoltaic windows.
关键词： switchable solar cell,spectrally selective solar cell,absorption enhancement,ultrathin absorber,amorphous germanium
更新于2025-09-16 10:30:52
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Investigation of UV Irradiation Response of Optical Fiber Sensors for Radiation Dosimetry
摘要： In this work, the investigation of radiation response for modified cladding multimode optical fibres exposed to UV radiation (N2 Laser) in terms of Radiation-Induced Attenuation (RIA) had been presented. The optical fibres were tapered to 65 and 60 μm then dipped into (5wt % of Germanium to modify the cladding region. By exposing these fibres to different energies of UV irradiation, the transmission spectra were online monitored and recorded every ten seconds to analyze the attenuation changes with the increasing of the radiation dose. The experimental results revealed two points: the first point is that the sensor undergoes the RIA effect which is resulted from the interaction between the radiation and the dopant material, and the second point shows that the sensitivity increases as the diameter of the sensor decrease. From these outcomes, we can conclude that such a sensor can be employed in different dosimetry applications.
关键词： Radiation Dosimeters,Radiation-Induced Absorption,Optical Fiber Sensors,Germanium Doped Optical Fibers
更新于2025-09-16 10:30:52
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A Comprehensive Study on a Stand-Alone Germanium (Ge) Solar Cell
摘要： The effect of temperature on the performance parameters [short-circuit current density (JSC), open-circuit voltage (VOC), ?ll factor (FF), and conversion ef?ciency (g)] of stand-alone germanium (Ge) solar cells has been theoretically investigated. Although JSC increased with increasing temperature, g decreased due to a decrease in VOC and the associated decrease in the FF. The performance parameters JSC, VOC, FF, and g of a fabricated stand-alone Ge solar cell were determined from current–voltage (I–V) measurements. The signi?cant differences between the obtained theoretical and experimental data may be related to both the use of idealized cases in the theoretical studies and the loss mechanisms considered to adversely affect the performance of the fabricated stand-alone Ge solar cell.
关键词： current–voltage characteristics,Temperature,germanium solar cell,solar cell performance
更新于2025-09-12 10:27:22
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A Multirange Photodetector Based on the Effect of Photon Dragging Current Carriers in Germanium for High-Power Lasers in the Infrared Range
摘要： A highly efficient model of a photodetector based on the effect of dragging free current carriers by photons in semiconductors is proposed, which makes it possible to quickly change the working length of a crystal element. In this case, it is possible to expand the range of measured pulse durations by reducing or increasing the photodetector sensitivity.
关键词： high-power lasers,photodetector,photon dragging,infrared range,germanium
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Mid-Infrared GeSn-Based LEDs with Sn Content up to 16%
摘要： We have grown by Reduced Pressure Chemical Vapor Deposition (RPCVD) vertical GeSn light-emitting diodes (LEDs) with (i) Sn content ranging from 6% to 16% and (ii) with or without SiGeSn barriers. Direct band-gap behaviors and activation energies of defects affecting emission efficiency of our different stacks were analyzed by temperature dependent electroluminescence measurements. A strong light emission enhancement was observed thanks to SiGeSn confinement barriers compared to reference samples. The electroluminescence intensity of Ge0.84Sn0.16 LEDs was increased by a factor 2 compared to that of Ge0.87Sn0.13 devices. This strong enhancement at room temperature is attributed to the increase of the splitting energy between Γ and L valleys for higher Sn content LEDs.
关键词： Germanium Tin,Silicon Photonics,Group IV laser,LED
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Germanium Photodetectors with 60-nm Absorption Coverage Extension and ～2× Quantum Efficiency Enhancement across L-Band
摘要： Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ~2× enhancement on the quantum efficiency across the L-band.
关键词： silicon nitride stressor,CMOS-compatible,longer wavelength detection,photodetectors,germanium
更新于2025-09-12 10:27:22