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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - The Effect of H<inf>2</inf>/Ar Plasma Treatment Over Photoconductivity of Sige Nanoparticles Sandwiched Between Silicon Oxide Matrix
摘要： The effect of room temperature hydrogen plasma treatment on the photoconductive properties of the SiO2 matrix containing SiGe nanoparticles is investigated. A considerable increase in photocurrent intensity is observed after plasma treatment. The increase is partly attributed to neutralization of dangling bonds around the nanoparticles and partly to passivation of non-radiative centers and defects in the matrix and at the nanoparticles-matrix interfaces.
关键词： hydrogenation,magnetron sputtering,photoconductivity,HiPIMS,SiGe,SiO2
更新于2025-09-23 15:22:29
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Gas Breakdown and Discharge Formation in High-Power Impulse Magnetron Sputtering
摘要： Discharge behaviors of high-power impulse magnetron sputtering with different targets have been investigated. Distinct current–voltage curves and target current waveforms are observed. Breakdown voltage and the maximum target current show a periodic drop with the increase of atomic number in subgroups and periods. The target current density is found to be mainly affected by the secondary electron emission yield. Thus, its magnitude is unable to directly evaluate the ionization degree of sputtered atoms in high-power impulse magnetron sputtering (HiPIMS) process. In this paper, the interactive influence of secondary electron emission, sputter yield, and ionization energy on the ionization degree of sputtered atoms is discussed based on the analysis of the voltage and current characteristics. As a result, targets can be categorized into three sorts according to the ionization degree: 1) low ionization degree targets, such as Ag and C less than 10%; 2) intermediate ionization degree targets like Cr and Cu with 55% and 35%; 3) Ti, Zr, and Mo targets with the second ionization processes. These results provide institutive operation ranges for the state-of-the-art HiPIMS applications.
关键词： optical emission spectroscopy (OES),ionization degree,Current waveform,gas breakdown,high-power impulse magnetron sputtering (HiPIMS)
更新于2025-09-23 15:22:29
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The influence of positive pulses on HiPIMS deposition of hard DLC coatings
摘要： Diamond-like carbon (DLC) coatings were deposited by a novel HiPIMS method that incorporates positive voltage pulses at the end of the conventional HiPIMS discharge. Different positive voltage amplitudes (100, 200, 300, 400 and 500 V) were used to evaluate the effect of this operation mode on the discharge process and the mechanical properties of the deposited DLC coatings. The application of positive pulses was observed to enhance the ionization of both the sputtered carbon and argon species. Mass spectroscopy measurements showed that a larger amount of high-energy C+ ions are generated, with ion energies proportional to the amplitude of the overshoot voltage. The ion bombardment induced by the positive pulses led to higher compressive residual stresses and densification of deposited DLC coatings. Moreover, their Raman spectra exhibited lower D-band and G-band intensity ratios (ID/IG) as the pulses voltage was increased which is indicative of higher sp3 content. Mechanical properties were evaluated by nanoindentation testing and the hardness of the deposited DLC films was observed to increase from 9.6 GPa (for no voltage pulse applied) to 22.5 GPa (for an applied positive pulse voltage of 500 V).
关键词： HiPIMS,Hard coatings,Diamond-like Carbon (DLC),Tribology
更新于2025-09-23 15:21:01
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The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
摘要： Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material, which creates new possibilities for surface engineering. Ions can, in contrast to atoms, be easily controlled with regard to their energy and direction, which is beneficial for thin film growth. Furthermore, ions can also increase the trapping probability of material on nanoparticles growing in the gas phase. The pulsed sputter ejection of source material also has other consequences: the material in the plasma and the material arrival on the growth surface will fluctuate strongly resulting in high level of supersaturation during pulse-on time. In this paper, an overview of the generation and properties of highly ionized pulsed plasmas is given. In addition, the use and importance of these types of discharges in the fields of thin-film and nanoparticle growth are also summarized.
关键词： HiPIMS,HPPMS,sputtering,IPVD,thin films,nanoparticle synthesis
更新于2025-09-23 15:21:01
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[Lecture Notes in Networks and Systems] Advances in Engineering Research and Application Volume 63 (Proceedings of the International Conference, ICERA 2018) || Comparison Between DC and HiPIMS Discharges. Application to Nickel Thin Films
摘要： The study deals with a comparison between Direct Current (DC) and High Power Impulse Magetron Sputtering (HiPIMS) processes. We have ?rst highlighted that the plasma of the DC discharge is composed mainly of gaseous species whereas the HiPIMS discharge leads to a plasma dominated by metal vapor and characterized by the presence of charged species of strong and low energy. For thin nickel (Ni) ?lms, we have found the the use of HiPIMS produce denser and better crystallized layers improving the uniformity of the coating on substrates with complex geometries.
关键词： Nickel thin ?lms,HiPIMS,Magnetron sputtering
更新于2025-09-23 15:21:01
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Temporal evolution of spatial optical emission characteristics by inductively-coupled impulse sputtering (ICIS) using high power-burst 155kHz-ICP
摘要： A copper target was negatively-biased and was sputtered by bombardment of argon ion species produced 155 kHz-inductively-coupled plasma (ICP) in a burst-pulse mode for a duration of 800 μs. This system was called ICIS (Inductively-coupled impulse sputtering). The plasma density was on the order of 1019 m-3 in the ICP region. The target current density and the power density were about 0.8 A/cm2 and about 0.3 kW/cm2, respectively. Temporal evolution of the optical emission of the plasma species was discussed. The observed species were argon ions, excited argon and excited copper. The entire region consisted of the ICP, a bulk plasma and a target plasma. Argon ions produced in the ICP were transported by an ambipolar diffusion toward the target and excited argon and excited copper species were mainly produced in the target plasma. A plateau emission by argon ions and spike emission by energetic electrons which were originated from secondary electrons were seen. Gas rarefaction of argon gas also influenced the temporary evolution particularly near at the target. This was discussed using a carbon target.
关键词： Inductively-coupled impulse sputtering,glow discharge,Inductively-coupled plasma,High power impulse magnetron sputtering,HiPIMS,ICIS
更新于2025-09-23 15:19:57
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Synthesis of Anatase (Core)/Rutile (Shell) Nanostructured TiO <sub/>2</sub> Thin Films by Magnetron Sputtering Methods for Dye-Sensitized Solar Cell Applications
摘要： Currently, anatase/rutile core/shell structures are accepted as highly efficient building blocks for TiO2-based catalysts or photo-electrodes used in dye-sensitized solar cells (DSSCs). It is understood that a thin layer of rutile covering the core anatase pillar would improve the performance of DSSCs by retarding the charge recombination at the semiconductor/sensitizer/electrolyte interfaces. In this work, we report on the synthesis of core/shell nanostructured TiO2 thin films using reactive magnetron sputtering at a glancing angle with different power applying modes: well-separated pillars of pure anatase were synthesized using the DC mode, and then, high-pulse peak power was applied to the Ti target (high power impulse magnetron sputtering – HiPIMS) resulting in the covering of the anatase columns with a thin layer of rutile. The latter technique is well-known to increase the energy load during the growth of the film which is a key parameter to successfully obtain the TiO2 phase normally only achieved at high temperature, i.e. rutile. The peak current, the frequency and the pulse width were optimized in order to obtain the desired crystalline structure and thickness of the rutile top layer. Scanning Electron Microscopy (SEM) cross-section views of the synthesized films clearly show that the pillar-like structures are not affected by the energetic species striking the surface during the HiPIMS process. Grazing Incidence X-Ray Diffraction (GIXRD) suggests the presence of both anatase and rutile phases in the films. Further characterization of the anatase/rutile core/shell interface by electron transmission techniques such as Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS) mapping confirm the hypothesis and reveal that the anatase pillars are partly covered by a rutile crust.
关键词： EELS,Dye-Sensitized Solar Cells,TEM,TiO2,GLAD,Reactive Magnetron Sputtering,core/shell nanostructures,HiPIMS
更新于2025-09-12 10:27:22
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An Inverted Magnetron Operating in HiPIMS Mode
摘要： An ionized physical vapor deposition technique for thin ferromagnetic films is proposed. The technique is based on high power impulse magnetron sputtering (HiPIMS) with positive discharge polarity. A gapped-target was employed as the cathode of the magnetron. By applying positive HiPIMS pulses to the anode, sputtered particles inside the magnetron source were ionized and extracted through the gap. Using a discharge current with a peak of about 13 A, an ion flux in the order of 1021 m?2s?1 was obtained at a distance of 45 mm from the magnetron. In addition, deposition rates of up to 1.1 ?/s for nickel films were achieved using a 30 Hz repetition rate and 300 μs pulse width.
关键词： ferromagnetic,ionized physical vapor deposition,HiPIMS,magnetron sputtering,thin films
更新于2025-09-09 09:28:46
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Significant improvement of the performance of ZrO2/V1-W O2/ZrO2 thermochromic coatings by utilizing a second-order interference
摘要： The paper deals with VO2-based thermochromic coatings prepared by reactive magnetron sputtering. We combine four ways how to improve the coating performance and to increase its application potential. First, reactive high-power impulse magnetron sputtering with a pulsed O2 flow control allowed us to prepare crystalline VO2 of the correct stoichiometry under highly industry-friendly deposition conditions: without any substrate bias at a low deposition temperature of 330 °C. Second, doping of VO2 by W (leading to V1-xWxO2, with x = 0.012 in this work) allowed us to shift the thermochromic transition temperature towards the room temperature (39 °C in this work), without concessions in terms of coating properties. Third, we employ ZrO2 antireflection layers both below and above the thermochromic V1-xWxO2 layer, and present an optimum design of the resulting ZrO2/V1-xWxO2/ZrO2 coatings. Most importantly, we show that while utilizing a first-order interference on ZrO2 leads one to a tradeoff between the luminous transmittance (Tlum) and the modulation of the solar transmittance (ΔTsol), utilizing a second-order interference allows one to optimize both Tlum and ΔTsol in parallel. Fourth, the crystalline structure of the bottom ZrO2 layer further improves the VO2 crystallinity and the process reproducibility. The optimum experimental values of ZrO2 thickness are in agreement with those predicted during the coating design. The results are important for the design and low-temperature fabrication of high-performance durable thermochromic VO2-based coatings for smart window applications.
关键词： Thermochromic coatings,Low deposition temperature,Antireflection layer,HiPIMS,Doping,VO2
更新于2025-09-04 15:30:14
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Energy-enhanced deposition of copper thin films by bipolar high power impulse magnetron sputtering
摘要： Bipolar Pulse High Power Impulse Magnetron Sputtering (BP-HiPIMS) was investigated and used in this work to control the ion bombardment process of growing thin films and to improve their structure and properties. Energy-resolving mass spectroscopy was used to investigate the effect of reverse target voltage on the ion energies and fluxes during BP-HiPIMS of a high-purity copper target, in argon gas. It was found that the reverse target voltage provides a wide range of ion energies and fluxes incident to the growing film, which, in turn, produce a wide variety of effects during the deposition process, improving the adhesion strength and influencing both surface and bulk properties. Fast ICCD imaging was used to investigate both HiPIMS and BP-HiPIMS plasma dynamics. The temporal and spatial distributions of plasma potential measurements were performed in order to explain the mechanisms for accelerating the ions. The topological, structural and mechanical properties of the deposited coatings were investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), thermal desorption spectroscopy (TDS), scanning electron microscopy (SEM), nanoindentation and scratch tests. The obtained results indicate an energy-enhanced deposition process during BP-HiPIMS, the deposited films being characterized by smooth surfaces, dense microstructure, small inert gas inclusions, high elastic strain to failure, scratch resistance and good adhesion to the substrate. These improvements in the films’ structure and properties may be attributed to the intense and energetic ion bombardment taking place during the deposition process. During BP-HiPIMS operation, there is no net increase in the deposition rate as compared to the monopolar regime due to the re-sputtering process.
关键词： Bipolar Pulse High Power Impulse Magnetron Sputtering (BP-HiPIMS),Tribology,Fast ICCD imaging,Ion energy distributions (IED)
更新于2025-09-04 15:30:14