- 标题
- 摘要
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- 实验方案
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Generation of High Quality, Uniform and Stable Plasmonic Colorants via Laser Direct Writing
摘要： Brilliant plasmonic colors with long-standing stability are generated via laser direct writing. This plasmonic coloring system is made of silver nanoparticles (Ag NPs) layer embedded in the quartz glass formed by ion implantation. The laser-induced plasmonic heating merges the small Ag NPs into larger ones, which modifies the plasmon resonances. The plasmon resonances can be further tuned via changing the irradiation time and power, which shows scattering colors ranging from red to green and cyan. By scanning the laser across the Ag NPs layer, sophisticated plasmonic patterns and images with high resolution (≈105 DPI) can be obtained and preserved over long time (several months). This plasmonic coloring system via laser printing is facile, cost-effective, accurate, and highly stable with rich hue, compared to other plasmonic color systems, which bears significant potentials for industrial applications such as optics, displays, decorations, data storage, and anti-counterfeiting.
关键词： color printing,photothermal,silver nanoparticles,ion implantation
更新于2025-09-19 17:13:59
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[IEEE IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium - Yokohama, Japan (2019.7.28-2019.8.2)] IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium - NOAA-20 Visible Infrared Imaging Radiometer Suite (VIIRS) on-Orbit Band-To-Band Registration Estimation for Reflective Solar Band (RSB) Using Scheduled Lunar Collections
摘要： We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 1014 cm?3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at ?26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm?2 at ?20 V at 200 K.
关键词： infrared detectors,ion implantation,Avalanche photodiodes
更新于2025-09-19 17:13:59
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Ion-Induced Electrical Isolation in GaN-Based Platform for Applications in Integrated Photonics
摘要： GaN based Photonic Integrated Circuits (PICs) have now become a global contender for their wide range of applications owing their physical characteristics. The GaN material system acts as a promising platform; compatible with silicon and sapphire substrates. Both the carrier transport and carrier removal techniques are vital to develop the efficient platform for the integration of photonic circuits. We demonstrate the carrier removal mechanism in silicon (Si) doped GaN (0001) epitaxially grown on c-plane sapphire wafer using ion engineering of the devices. Ion-engineered regions within the active layers of the device are modelled, fabricated and characterized to assess the isolation created. Helium and Carbon ions with pre-designed doses and energies are used to irradiate the device structures. We have modelled and fabricated ion-engineered regions within the active layers and studied the carrier transport properties on said regions to isolate that particular part with either of active photonic components placed at the common platform. After ion irradiation, detailed analysis in terms of electric field dependent current characteristics, sheet resistance, carrier mobilities, activation energies, dark and photo currents under zero (ground) and multiple biases are examined to see the extent of charge leakage and to map the charge behavior under nominal operation. Device characteristics under wide regime of annealing temperatures ranging from 300oC to 1000oC are mapped to evaluate the thermal stability of implant driven isolated regions. Activation energies of implanted and parent regions has also been studied. The dark and photon driven electric currents at ground and under biased have been measured to investigate the photo-induced transport phenomenon.
关键词： Photonic Integrated Circuits,Electrical Isolation,Ion Implantation,Crosstalk
更新于2025-09-16 10:30:52
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Microstructure Investigation of He<sup>+</sup>- Implanted and Post-Implantation-Annealed 4H-SiC
摘要： Microstructure damage and evolution in 4H-SiC under He-ion implantation and post-annealing have been investigated by the combination of fourier transform infrared spectrometer (FTIR), Raman scattering spectroscopy and high resolution X-ray diffractometer (HRXRD). After implantation, the 4H-SiC specimen exhibits a heavy damage and some amorphous state appear. With increasing annealing temperature, to some extent recovery in damaged lattices was observed, as a result of the peaks of Raman and HRXRD regain their intensities. However, the reverse annealing behavior in damaged peaks was displayed after annealed at 973K. This reverse annealing effect was revealed to be due to the formation and the growth of He bubbles above 973K.
关键词： HRXRD,SiC,FTIR,He-ion implantation,Annealing,Raman
更新于2025-09-16 10:30:52
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[IEEE 2018 22nd International Conference on Ion Implantation Technology (IIT) - Würzburg, Germany (2018.9.16-2018.9.21)] 2018 22nd International Conference on Ion Implantation Technology (IIT) - Ion Implantation of As, P, B, BF and BF <sub/>2</sub> on Planar and Alkaline-Textured Si(001) Surfaces for Photovoltaic Applications
摘要： We compare the electrical behavior of different dopant species (As, P, B, BF, BF2) on solar-relevant surfaces (alkaline textured and planar). We find significant differences when substituting B by BF or BF2 as well as when using As instead of P. For the latter equivalent recombination behavior is observed, whereas the sheet resistance is higher when using As. The use of F containing p-type species leads to an increase in sheet resistance and saturation current density.
关键词： ion implantation,silicon,solar cells
更新于2025-09-16 10:30:52
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Proton-implanted waveguides in neodymium-doped calcium lithium niobium gallium garnet crystals
摘要： In this work, the 400-keV proton implantation with a ?uence of 8 × 1016 ions/cm2 was employed to form a planar waveguide in the Nd: CLNGG crystal. The distributions of the energy loss and the refractive index pro?le were simulated by the SRIM 2013 and the RCM, respectively. The m-line curve and the near-?led intensity distribution were measured by the prism coupling technique and the end face coupling method, respectively. The proton-implanted Nd: CLNGG crystal waveguide with well-con?ned propagation can serve as an active in- tegrated element.
关键词： Nd: CLNGG crystal,Waveguide,Ion implantation
更新于2025-09-16 10:30:52
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Design and fabrication of three-dimensional single-mode waveguide arrays in bulk diamond through direct focused proton beam implantation
摘要： We demonstrate the feasibility of creating three-dimensional photonic devices through the realization of multi-level waveguides inside diamond by a series of systematic combined simulations grounded on Monte-Carlo statistics and Maxwell solver algorithms. Further, we have fabricated the counterparts of the multi-level waveguides buried in single crystalline diamond using a process based on several proton beam irradiation steps with different energies and fluences. On top of that, we draw a thorough comparison between the simulation results and the experimental observations, and find that they are in a good agreement with each other. Moreover, the simulation results also provide additional information such as the working fluence range of single-mode light (1550 nm) wave-guiding, the effective refractive index, and the polarization direction. The proof-of-concept of producing three-dimensional optical and photonic structures by direct focused proton beam implantation would open up a variety of new opportunities in designing and fabricating optical modulators, photonic components and quantum-computing related functional devices in bulk diamond, thus further promoting the development of three-dimensional diamond photonics.
关键词： FDE simulation,SRIM simulation,Ion implantation,Proton beam writing,3D diamond waveguide arrays
更新于2025-09-16 10:30:52
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Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure
摘要： In this work we present an innovative method of creating Si quantum dots under pulsed ion-beam exposure. The evolution of defect structure ODC(II) - E0 - ODC(I) - Si QDs in glassy SiO2 under ion-beam implantation was established by optical absorption and photoluminescence spectroscopies. Depending on the mode of ion exposure, it is possible to easily control the type and concentration of defects in the host and modify its optical properties for novel applications. Ab initio calculations confirm that bond softening in SiO2 is attainable via the use of Gd ion implantation. According to our experimental and theoretical results, the three-stage interaction of primary oxygen-deficient centers leads to the formation of stable silicon quantum dots with a size of 3.6 nm and luminescence at 1.8 eV excited by incoherent light.
关键词： Gd ion implantation,Si quantum dots,pulsed ion-beam exposure,optical absorption,photoluminescence spectroscopies,glassy SiO2
更新于2025-09-12 10:27:22
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Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells
摘要： Fully ion-implanted n-type PERT solar cells with boron-implanted emitter and phosphorus-implanted back surface field were fabricated on the n-type silicon wafers obtained from the top part of the magnetic field-applied Czochralski ingot. It was observed that the electrical parameters are widely dispersed; among 11 solar cells, the best performing achieved 20.4% front side conversion efficiency, whereas the worst achieved 19.0%. Although the silicon wafers had low oxygen concentrations of 3–4 × 1017 atoms/cm3, the density of oxygen precipitates in the silicon wafers was on the order of 109 /cm3 as a consequence of the fully ion-implanted n-type PERT silicon solar cell processes. In addition, it was observed that the front side conversion efficiencies of the solar cells depended on the density of oxygen precipitates. Furthermore, the behavior of the oxygen precipitation during the fabrication processes of the solar cell is discussed.
关键词： oxygen precipitation,conversion efficiency,ion implantation,n-type PERT solar cells,silicon wafers
更新于2025-09-12 10:27:22
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Ag ion implanted TiO2 photoanodes for fabrication of highly efficient and economical plasmonic Dye Sensitized Solar Cells
摘要： Materials with tunable optical and photoelectric properties are prerequisite for the development of highly stable, economical and efficient dye sensitized solar cells (DSSCs). In this direction, improved plasmonic DSSCs with comparatively higher light harvesting ability and reduced recombination of photo-generated charge carriers have been fabricated using low energy (120 KeV) Ag ion implanted TiO2 photoanodes at variable fluence. Herein, the origin of improved photovoltaic performance of Ag implanted DSSCs against conventional DSSC has been explained using UV-visible, photoluminescence and kelvin probe measurements. Further, the efficient interfacial charge transportation within Ag implanted DSSCs has been demonstrated through EIS measurements.
关键词： Fermi energy equilibration,Ion Implantation,Localized Surface Plasmon Resonance (LSPR)
更新于2025-09-12 10:27:22