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Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors
摘要： Despite their potential use as pixel-switching elements in displays, the bias and light instability of mixed oxide semiconductor thin-film transistors (TFTs) still limit their application to commercial products. Lack of reproducible results due to the sensitivity of the mixed oxides to air exposure and chemical contamination during or after fabrication hinders any progress towards the achievement of stable performance. Consequently, one finds in literature several theories and mechanisms, all justified, but most of them conflict despite being on the same subject matter. In this study, we show that under an optimized fabrication process, which involves the in situ passivation of a mixed oxide semiconductor, we can reduce the bias and light instability of the mixed-oxide semiconductor TFTs by decreasing the semiconductor thickness. We achieve a negligible threshold voltage shift under negative bias combined with light illumination stress when the mixed oxide semiconductor thickness is around three nanometers. The improvement of stability in the thin mixed-oxide semiconductor TFTs is due to a reduced number of oxygen-vacancy defects in the bulk of the semiconductor, as their total number decreases with decreasing thickness. Under the optimized fabrication process, bulk, rather than interfacial defects, thus seem to be the main source of the bias and light instability in mixed oxide TFTs.
关键词： oxide,stability,thin film transistor
更新于2025-11-14 17:28:48
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Enhanced piezoelectricity of a PVDF-based nanocomposite utilizing high-yield dispersions of exfoliated few-layer MoS2
摘要： Piezoelectric polymer composite ?lms have attracted extensive attention due to their comprehensive characteristics such as low cost, good ?exibility, mechanical property and excellent processability. Among the known polymers, poly (vinylidene ?uoride) (PVDF) is an ideal piezoelectric polymer because the β-crystalline form of PVDF has the highest polarization per unit cell. However, initial PVDF mostly su?ers from the lack of a β phase, restricting its potential applications. Few-layer MoS2 is predicted to be strongly piezoelectric owing to the opposite orientations of adjacent atomic layers. In this work, we report an e?cient approach to enhance the piezoelectric property of PVDF-based nanocomposites by combining few-layer MoS2 with PVDF. The product yield for few-layer MoS2 reached a value as high as 83.3% via a unique liquid-exfoliation technique. For a few-layer MoS2/PVDF composite ?lm with 1 wt.% few-layer MoS2, a high piezoelectric performance enhancement of 360% was achieved compared with the initial PVDF ?lm. In addition, due to the intrinsic lubrication of MoS2, the highest elongation of the piezoelectric composite ?lm was found to be four times higher than that of the pure PVDF ?lm.
关键词： Composite,Film,Piezoelectric performance,Few-layer
更新于2025-11-14 17:28:48
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Phase-transition induced giant negative electrocaloric effect in a lead-free relaxor ferroelectric thin film
摘要： Ferroelectric/antiferroelectric thin/thick films with large positive or negative electrocaloric (EC) effects could be very useful in designing commercial refrigeration devices. Here, a giant negative EC effect (maximum ΔT ≈ ?42.5 K with ΔS ≈ ?29.3 J K?1 kg?1) comparable to the best positive EC effects reported so far is demonstrated for 0.5(Ba0.8Ca0.2)TiO3–0.5Bi(Mg0.5Ti0.5)O3 (BCT–BMT) lead-free relaxor ferroelectric thin films prepared on Pt(111)/TiOx/SiO2/Si substrates using a sol–gel method. An electric-field induced structural phase transition (nanoscale tetragonal and orthorhombic to rhombohedral) along the out-of-plane [111] direction plays a very key role in developing the giant negative EC effect. This breakthrough will pave the way for practical applications of next-generation refrigeration devices with high cooling efficiency in one cycle by ingeniously utilizing and combining both the giant negative and positive EC effects. Moreover, a large energy density of 51.7 J cm?3 with a high power density of 1.15 × 1010 W kg?1 at room temperature is also achieved in the thin film, indicating that it is also an attractive multifunctional material for energy storage.
关键词： lead-free,energy storage,electrocaloric effect,phase transition,thin film,relaxor ferroelectric
更新于2025-11-14 17:28:48
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Preparation of high quality perovskite thin film in ambient air using ethylacetate as anti-solvent
摘要： Methylamine lead iodide (CH3NH3PbI3) perovskite thin film solar cell has attracted much attention due to its low cost and high photoelectric conversion efficiency. Preparation of high quality perovskite thin film is the key to obtain high conversion efficiency of solar cells. Here, the pinhole-free CH3NH3PbI3 layer with high coverage and smooth surface is prepared by the one-step solution method in air with ethylacetate as anti-solvent on an electron transport hybrid layer of TiO2 nanoparticles coated porous carbon. The effect of ethylacetate as anti-solvent on the quality of perovskite thin film is studied in detail by comparing with chlorobenzene and ethylether. The high saturation and humidity resistance of ethylacetate in air control the nucleation and growing kinetics of perovskite crystals during the spin coating process, which facilitates the formation of uniform pinhole-free perovskite thin films. The perovskite solar cell based on the prepared high quality thin film achieves the highest conversion efficiency of 17.41% in ambient air with a relative humidity of 35%, which is superior to the perovskite thin films prepared with chlorobenzene and ethylether (conversion efficiency of 10.80% and 10.20%). The higher light-to-electric conversion efficiency is due to high coverage of the pinhole-free perovskite thin film and good contact with the electron transport layer and the hole transport layer.
关键词： Anti-solvent,Perovskite solar cell,Uniform perovskite thin film,Ethylacetate
更新于2025-11-14 17:03:37
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Ultrafast Transition of Non-Uniform Graphene to High-Quality Uniform Monolayer Film on Liquid Cu
摘要： It is essentially important to synthesize uniform graphene films with controlled number of layers since their properties strongly depend on the number of layers. Although chemical vapor deposition (CVD) on Cu has been widely used to synthesize large-area graphene films, the growth on solid and liquid Cu suffers from poor thickness uniformity with a great number of adlayers and difficulty in forming continuous film even after a long growth time of hours, respectively. Here, we found that non-uniform graphene film initially grown on solid Cu foil can rapidly transform into continuously uniform monolayer graphene film on liquid Cu within 3 min. Moreover, the films obtained show larger grain size, higher quality, better optical and electrical properties and better performance in organic light-emitting diode (OLED) applications than the original films grown on solid Cu foil. By using carbon isotope labeling, we revealed that the multilayer-to-monolayer transition of graphene on liquid Cu experiences etching-‘self-aligning’-coalescence processes. This two-step CVD method not only opens up a new way for the rapid growth of uniform monolayer graphene films, but also provides helpful information for the controlled growth of uniform monolayers of other 2D materials such as monolayer h-BN.
关键词： film,2D material,chemical vapor deposition,number of layers,graphene
更新于2025-11-14 17:03:37
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Luminescent Composites Based on Tetrafluoroethylene Copolymer Porous Films Produced by the Diffusion Embedding of Semiconductor Nanoparticles in a Supercritical Medium
摘要： A method for creating film composites based on a new material—a fibrous copolymer of tetrafluoroethylene and vinylidene fluoride—using the diffusion embedding of ready-made nanoparticles into a porous matrix in a supercritical (SC) carbon dioxide medium is developed. The method of cold or hot pressing of impregnated porous films was used at the final stage of creation of such composites. The peculiarities of the effect of the supercritical fluid treatment of porous copolymer films on the surface structure of pressed films are discussed. Luminescent composites with semiconductor nanoparticles of cadmium selenide and nanocrystalline silicon are obtained; their radiation covers a range of 500–1000 nm. The change in the luminescence properties of the resulting nanocomposites under the action of excitation laser radiation at 405 nm is demonstrated.
关键词： cadmium selenide,film composite,fibrous matrix,luminescent properties,diffusion embedding,nanocrystalline silicon
更新于2025-11-14 15:30:11
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Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power
摘要： GaN thin film was successfully produced on n-Si(100) substrate by RF magnetron sputter under different RF power. Experimental measurement techniques such as UV/Vis spectroscopy, field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and Micro-Raman Spectroscopy were used to research effects of Radio Frequency power on physical properties of produced thin film. It has been found that produced thin film was polycrystalline structure with (100) and (110) planes of hexagonal GaN from X-ray diffraction measurement result. It also proved that increasing RF power gives rise to deterioration in crystal quality of GaN thin film. Reason of this deterioration was discussed. It has been achieved that increasing RF power has resulted in decreasing optical band gap energy of GaN thin film. Reasons for these changes in optical band gap energy were explained. It was seen that some thin films were grown as layer-plus-island mode (Stranski–Krastanov growth mode) and others were grown as layer-by-layer growth mode (Frank van der Merwe mode) from AFM analysis. It has been found that increasing RF power has resulted in improvement of surface morphology of thin film from field emission scanning electron microscopy analysis. However, reaching RF power to 125 W leads to start to deteriorate of surface of GaN thin film. The reasons for this have been discussed. E1(TO) transverse optical phonon mode of hexagonal GaN with different intensity was detected from Micro-Raman Spectroscopy measurement. The reasons for this difference have been discussed. It was concluded that RF power has played a significant role in growing high quality GaN thin film. Morphological, structural, and optical properties of GaN thin film were enhanced by controlling RF power, making them a potential candidate for LED, solar cell, diode application.
关键词： Thin film,III-nitride,RF magnetron sputter,Semiconductor,GaN
更新于2025-11-14 15:25:21
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All-Thin-Film Tandem Cells Based on Liquid Phase Crystallized Silicon and Perovskites
摘要： Combining the emerging perovskite solar cell technology with existing silicon approaches in a tandem cell design offers the possibility for new low-cost high-performance devices. In this study, the potential of liquid phase crystallized silicon (LPC-Si) solar cells as a bottom cell in an all-thin-film tandem device is investigated. By optimizing the current output of a four terminal tandem using optical simulations and state-of-the-art electrical properties of the top and bottom cells, we show that an efficiency of 23.3% can be reached, where 7.2% are attributed to the LPC-Si bottom cell. Including the potential of future developments of both sub cells, efficiencies of over 28% are estimated. Electrical and optical measurements of the bottom cell are performed by attaching a perovskite and a cutoff filter to the front side of the interdigitated back contacted LPC-Si cells. The measurements using a cutoff filter show a high impact of the filtered incident light spectrum on the open circuit voltage of the LPC-Si cell. A comparison of the simulated and measured absorptance shows that especially the optical properties of the transparent conductive oxides and recombination losses in the LPC-Si cause high current losses. Combining the measured data of the filtered LPC-Si cells and the semitransparent perovskite cells, yields a realistic estimation for the efficiency of a state-of-the-art four-terminal tandem device of 19.3%.
关键词： tandem devices,Liquid phase crystallization (LPC),perovskite solar cells,thin film photovoltaics
更新于2025-11-14 15:25:21
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Enhanced visible-light-driven photocatalytic activity of BiFeO3 via electric-field control of spontaneous polarization
摘要： Well-polarized BiFeO3 nanoparticles have been successfully prepared by a facile electrical poling method with the assist of a soluble organic-inorganic composite film. From XRD, TEM and SEM studies, no significant change in the crystal structure or morphology was detected after the electrical poling process. The visible-light driven photocatalytic process of poled BiFeO3 nanoparticles was accelerated by 2 times compared to unpoled BiFeO3. By combining time-resolved photoluminescence (PL), photoinduced silver deposition testing and photoelectrochemical measurements, it can be revealed that the enhanced photocatalytic performance of poled samples can be properly attributed to the promoted separation and prolonged lifetime of the photogenerated carriers caused by the ferroelectric polarization. These findings may offer a new route to promote the photocatalytic or photoelectric performances of BiFeO3 for advanced applications by adjusting the ferroelectric polarization.
关键词： BiFeO3 nanoparticles,Organic-inorganic composite film,Ferroelectric polarization,Electrical poling technology,Photocatalytic activity
更新于2025-11-14 15:24:45
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Photoelectrochemical enhancement from deposition of BiVO4 photosensitizer on different thickness layer TiO2 photoanode for water splitting application
摘要： TiO2 is a prominent photocatalyst and has been pioneering the research in water splitting for hydrogen cell production. However, TiO2 has low visible region absorption which limit its functionality as a photoabsorber and requires addition of other high absorptive material such as BiVO4. Fabrication of TiO2 photoanode on FTO substrate and deposition of BiVO4 on TiO2 were done using simple spin coating procedure. TiO2/BiVO4 photoelectrode were first tested for its photo absorption, photocurrent generation and electrical impedance to obtain the optimized sample. Optimized sample then further tested for its photocurrent generation stability using linear sweep voltammetry and time dependent photocurrent test. Photo absorption enhancement from TiO2/BiVO4 of almost 10 folds achieved along the visible region comparing to pure TiO2. Photogenerated charge produced from TiO2/BiVO4 is also 3 folds higher compared to pure TiO2at water oxidation threshold potential at 1.23 V vs. RHE. From photocurrent generation analysis, heterostructure of TiO2/BiVO4 proven to produce more than 3 folds higher photocurrent comparing to both pure TiO2 and BiVO4.
关键词： Z-scheme,Bismuth vanadate,Thin-film,Titanium dioxide,Photoelectrochemical water splitting
更新于2025-11-14 15:19:41