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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Monolithic Master Oscillator with Tapered Power Amplifier Diode Laser at 1060 nm with Additional Control Section for High Power Operation
摘要： State of the art diode laser light sources for high power operation with good beam quality are distributed Bragg reflector tapered diode lasers (DBR-TPLs). These devices deliver over 10 W of spectrally narrowband emission within an almost diffraction-limited beam [1]. However, due to the integration of the tapered section into the resonator, these devices are designed that only a forward traveling wave is optimal confined and amplified. This trade-off limits the potential of these devices. One way to overcome this limitation is to move the tapered section outside of the resonator and use as a single pass power amplifier in a monolithic master oscillator power amplifier (MOPA) layout [2]–[4]. However, the benefits on the emissions characteristics, as discussed below, of these devices can diminish if multi-cavity operation occurs. In this work, we present results on recently developed monolithic MOPAs for enhanced suppression of multi-cavity operation. The MOs in these devices are 2 mm long with a 7th order DBR grating at the front- and backside and a 0.75 mm long active section in the middle. An active 0.5 mm long control section (CON) follows the MO section. Both have a ridge waveguide (RW) width of 5 μm. The PA section is 3.5 mm long and defined by the tapered p-side contact with a full angle of 6°. The 3 different layouts are depicted in Fig. 1 a). In the first layout (top) all three section are in a straight line perpendicular to the front facet. The second layout (middle) has a MO section tilted by 4° and a bent CON section and the third layout (bottom) has bent CON section and a PA section tilted by 4°. Fig. 1 a) Sketch of all three monolithic MOPA layouts. b) Optical output power (solid lines) and the peak wavelength (dots) for three different monolithic MOPAs. The straight layout is used as reference to discuss the benefits of a bent control section and either a tilted MO or tilted PA on the emission characteristics of the devices. Furthermore the influence of the control section on the emission characteristics of the devices will be presented. This includes a comparison of the optical output power, the spectra and the beam quality factor of the devices. All devices provide over 6 W of optical output power at 1060 nm within a narrow spectral bandwidth below 17 pm (spectrometer resolution limit). However the overall emission characteristics have clear differences as can be seen in Fig. 1 b). Here the optical output power and the peak wavelength are plotted in dependence of the PA current. The laser with the tilted MO layout shows a small increase in output power compared to the straight layout and a reduction of spectral mode jumps for PA currents below IPA = 8 A. For the laser with the tilted PA layout the small spectral mode jumps due to multi-cavity operation are completely suppressed but the output power is reduced by 0.5 W.
关键词： MOPA,spectral bandwidth,diode laser,monolithic master oscillator power amplifier,high power operation,beam quality
更新于2025-09-11 14:15:04
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[IEEE 2018 Iranian Conference on Electrical Engineering (ICEE) - Mashhad (2018.5.8-2018.5.10)] Electrical Engineering (ICEE), Iranian Conference on - Design and Implementation of Broadband Solid State SC-Band High Power Amplifier
摘要： This paper presents the design and fabrication of a broadband high power amplifier from 2 to 6 GHz. The high power amplifier is implemented by combining several medium power GaN technology amplifiers to achieve 50 dBm output power. The architecture of the SC-band power amplifier consists of four power-lines, including a high power amplifier and a medium power amplifier as the input driver amplifier. Moreover, power combiners are used at the output of these lines. The designed power amplifier is then fabricated on a synthetic substrate for both high and low power sections. The measurement results show that the proposed design achieves 10 % to 28 % power added efficiency and 48 dBm to 51 dBm output power from 2 to 6 GHz.
关键词： GaN HEMTs,Power amplifier,Broadband power amplifier,SC band,Power combining
更新于2025-09-10 09:29:36
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NEW STABILIZATION TECHNIQUE TO PREVENT PARAMETRIC OSCILLATIONS IN A 35 W C-BAND ALGAN/GAN MMIC HIGH POWER AMPLIFIER
摘要： In this paper, a novel stabilization scheme to prevent parametric oscillations in power amplifiers is presented. Based on a new oscillation detection approach, the inductive degeneration technique was used, for the first time, to successfully stabilize a high-power amplifier and prevent parametric oscillations. A 0.15 μm AlGaN/GaN Microwave Monolithic Integrated Circuit high power amplifier operating at 5.8 GHz with 10% fractional bandwidth was designed and successfully stabilized using this approach. The proposed (4.7 × 3.7) mm2 three-stage amplifier achieves a saturated output power of 35 W with 29% power added efficiency and a large-signal gain of 26 dB.
关键词： AlGaN/GaN,MMIC,high power amplifier,stabilization technique,parametric oscillations
更新于2025-09-10 09:29:36
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Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub
摘要： In this paper, we describe the design of the first reported full W-band (75–110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology. The discussed MMICs come in two versions. Over a bandwidth (BW) of 70–110 GHz, the three-stage PA can deliver, on average, 25.6 dBm with a power-added efficiency (PAE) of 6.5%, while the four-stage PA is able to generate 27 dBm with a PAE of 6.1%. A peak output power of 28.6 dBm is achieved at 80 GHz with a PAE of 8.6%, which corresponds to a power density of 2.6 W/mm. The significant BW was achieved partially by incorporating a novel type of broadband radial stub into the design, which can provide nearly a twofold rejection-BW improvement over the conventional version. To the best of our knowledge, no other solid-state circuit can deliver such power levels over the complete W-band.
关键词： monolithic microwave integrated circuit (MMIC),Broadband,power amplifier (PA),high-electron-mobility transistor (HEMT),W-band (75–110 GHz),radial stub,gallium nitride,millimeter-waves (mm-waves)
更新于2025-09-09 09:28:46
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Partial Least Squares Identification of Multi Look-Up Table Digital Predistorters for Concurrent Dual-Band Envelope Tracking Power Amplifiers
摘要： This paper presents a technique to estimate the coefficients of a multiple-look-up table (LUT) digital predistortion (DPD) architecture based on the partial least-squares (PLS) regression method. The proposed 3-D distributed memory LUT architecture is suitable for efficient FPGA implementation and compensates for the distortion arising in concurrent dual-band envelope tracking power amplifiers. On the one hand, a new variant of the orthogonal matching pursuit algorithm is proposed to properly select only the best LUTs of the DPD function in the forward path, and thus reduce the number of required coefficients. On the other hand, the PLS regression method is proposed to address both the regularization problem of the coefficient estimation and, at the same time, reducing the number of coefficients to be estimated in the DPD feedback identification path. Moreover, by exploiting the orthogonality of the PLS transformed matrix, the computational complexity of the parameters’ identification can be significantly simplified. Experimental results will prove how it is possible to reduce the DPD complexity (i.e., the number of coefficients) in both the forward and feedback paths while meeting the targeted linearity levels.
关键词： principal component analysis (PCA),look-up tables (LUTs),power amplifier (PA),envelope tracking (ET),partial least squares (PLS),Digital predistortion (DPD)
更新于2025-09-09 09:28:46
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Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends
摘要： A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end comprises a power amplifier (PA), a low-noise amplifier (LNA), an antenna switch, and appropriate passive matching and combining networks. In this paper, a synthesis methodology is proposed that minimizes the overall losses by combining the PA output and the LNA input matching networks together with the T/R switch into one network. The technique improves mm-wave transceiver performance in terms of PA efficiency and LNA noise figure. The proposed T/R combiner can achieve high linearity and can handle large PA output voltage swings. The architecture can be implemented in any process which provides high integration capability. A Ka-band implementation is demonstrated using 45 nm CMOS silicon-on-insulator that includes a high power, four-stack-based PA and an inductively source-degenerated cascode-based LNA. Within the front-end, the PA achieves saturated output power of 23.6 dBm with peak power added efficiency of 28%, while the LNA achieves NF of 3.2 dB. The overall chip area is 0.54 mm2, including pads.
关键词： transmit/receive (T/R) switch,low-noise amplifier (LNA),power amplifier (PA),5G transmitters,stacked power amplifier,silicon-on-insulator (SOI),time-division duplex (TDD),CMOS,millimeter-wave (mm-wave),Ka-band
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - 4-18 GHz AIGaN/GaN Based Distributed Power Amplifier MMIC
摘要： A broadband power amplifier MMIC based on AlGaN/GaN HEMT technology from 4 GHz to 18 GHz was designed, fabricated and measured. Potential applications for this type of power amplifier are mainly electronic warfare (EW) and communication systems. Output power levels of more than 2 W are measured, with associated PAE levels of 14 to 25 %.
关键词： power amplifier MMIC,broadband power amplifier,HPA,AlGaN/GaN
更新于2025-09-04 15:30:14
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[IEEE 2018 Iranian Conference on Electrical Engineering (ICEE) - Mashhad (2018.5.8-2018.5.10)] Electrical Engineering (ICEE), Iranian Conference on - L-Band Power Amplifier Design with Discrete GaN Transistor
摘要： In this paper, design and fabrication of a L band solid-state high power amplifier is reported. GaN Transistor is the main active high power element in this amplifier design. ADS simulation is used to design and optimize the input and output matching of the transistor. With these optimized matching networks, more than 100 watt output power is obtained. For the GaN transistor, bias sequencing circuits in the gate and drain terminals are controlled by a digital board. Furthermore, a control loop using software is utilized to achieve a better operation in the fabricated system.
关键词： Power amplifier,Output power,Gain,power added efficiency,GaN technology
更新于2025-09-04 15:30:14
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X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power
摘要： High quality AlGaN/AlN/GaN high electron mobility transistors (HEMTs) were grown on 3-inch diameter semi-insulating 6H-SiC substrates by metal organic chemical vapor deposition. The GaN HEMT wafer exhibited an average sheet resistance of 342.2 Ω/□ with a uniformity of 1.5% by introducing both the high mobility GaN channel layer and AlN interlayer. At room temperature a Hall mobility of 2412.06 cm2/Vs and a two-dimensional electron gas density of 7.654 × 1012 cm?2 are achieved. Atomic force microscopy showed a smooth surface and a root-mean-square roughness of 0.227 nm for 10 × 10 μm2 scan area. Direct current measurements revealed a maximum drain current density of 1.31 A/mm and an extrinsic transconductance of 450 mS/mm. The current gain cutoff frequency and maximum frequency of oscillation of the device were measured to be 31 GHz and 60 GHz, respectively. Eight-cell internally-matched GaN HEMT device exhibited a maximum continuous-wave output power of 110.9 W at 8 GHz, with a power-added efficiency of 33.7% and a power gain of 6.35 dB.
关键词： X-Band,Power Amplifier,GaN HEMT
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Design and Implementation of an Encapsulated GaN X-Band Power Amplifier Family
摘要： This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors’ 0.25 μm GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.
关键词： pseudomorphic high electron mobility transistor (pHEMT),X-Band,wideband amplifiers,high efficiency,Power Amplifier (PA),thermal analysis,EM simulation,monolithic microwave integrated circuit (MMIC)
更新于2025-09-04 15:30:14