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Reverse bias-dependence of schottky barrier height on silicon carbide: influence of the temperature and donor concentration
摘要： The work deals with the dependences of the Schottky barrier height (SBH) on the reverse bias voltage, temperature and on donor concentration of metal/4H-SiC Schottky diodes. Using the tunneling modeling we have shown that the Schottky barrier height on silicon carbide strongly depends on the reverse bias voltage, temperature and doping concentration. At room temperature, the Schottky barrier height increases with increasing the reverse bias voltage at high doping concentration (about 1016 cm-3), while, at low doping concentration (about 1015 cm-3) the Schottky barrier height decreases with increasing the reverse bias voltage. These behaviors are independent of the Schottky barrier lowering effect. That means other effects occur at the barrier and depend on the reverse applied bias. The barrier height increases with increasing temperature and doping concentration under reverse bias conditions. The barrier heights extracted from the Padovani-Stratton formulas are close to the barrier heights extracted from the Tsu-Esaki formula in particular for the thermionic-field emission.
关键词： Reverse Bias,Silicon Carbide,Extraction,Tunneling,Schottky Barrier Height
更新于2025-09-23 15:22:29
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Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry
摘要： A detailed approach to evaluate the sub-surface damage of diamond wire-sawn monocrystalline silicon wafers relating to the sawing process is presented. Residual stresses, the presence of amorphous silicon and microcracks are considered and related to diamond wire velocity and cutting ability. In particular, the degree of amorphization of the wafer surface is analyzed, as it may affect the etching performance (texturing) during solar cell manufacture. Raman spectroscopy and Scanning Infrared Stress Explorer (SIREX) measurements are used independently as non-destructive, contactless optical characterization methods to provide stress imaging with high spatial resolution. Raman mappings show that amorphous silicon layers can occur inhomogeneously across the surface of diamond wire-sawn wafers. The Raman and SIREX results reveal a connection between a higher fraction of the amorphous phase, a more inhomogeneous stress distribution and a lower peak maximum of the stress difference on wafers, depending on both the wire wear and the wire velocity. SIREX line scans of the in-plane difference of the principal stress components ?σ taken across the sawing grooves show significant differences in magnitude and periodicity. Furthermore, the results are compared with the microcrack depth from the same investigation areas. The possibility to optimize the diamond wire sawing processes by analyzing the sub-surface stress of the wafers is offered by complementary use of both Raman and SIREX measurements.
关键词： SIREX,wire cutting ability,silicon,microcrack depth,diamond wire,amorphous phase,wire velocity,Raman,stress imaging,stress-induced birefringence
更新于2025-09-23 15:22:29
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Electronic Raman scattering as a probe for investigating interactions between impurities in silicon
摘要： Electronic Raman scattering (ERS) is investigated as a probe for interactions between impurities in silicon. We report ERS measurements of donors (P, Sb, and As) and acceptors (B) at various concentrations and measurements at various illumination wavelengths. The difference between above and below indirect band gap measurement is discussed in terms of the difficulties of using ERS as a localised probe. We extend the previous literature on impurity interactions of Si:P in the bulk to include Sb and B and demonstrate that the perturbation of the observed ERS transition energy resulting from wavefunction overlap of nearest neighbours is opposite for donors and acceptors. Finally, we model the magnitude of the shift to the first order as a function of the mean impurity atom separation.
关键词： silicon,electronic raman scattering,impurities
更新于2025-09-23 15:22:29
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Copper electrodeposition on silicon electrodes
摘要： A two-step process is reported for the electrochemical deposition of copper layers on n-type silicon substrates using an acidic copper sulphate solution without addition of additives and no light assistance. Metal layers were generated on electrodes with different crystal orientations. The process consists of a combination of two very common techniques: chronoamperometry and pulse plating. The former technique is applied to obtain an instantaneous nucleation on the working electrode. Therefore, a large amount of metal nuclei is formed on the substrate before the pulse technique starts. The latter is, then, used to grow the particles previously generated and form a homogeneous metal layer with full coverage onto the semiconductor electrodes. The potential magnitudes are carefully chosen in line with energy levels observed at the semiconductor-electrolyte interface and were also calculated in this work.
关键词： silicon coating,seedless electroplating,copper plating,semiconductor-electrolyte interface,pulse plating
更新于2025-09-23 15:22:29
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Revisiting the structures and energies of silicon ?110? symmetric tilt grain boundaries
摘要： Atomistic simulations of 18 silicon ?110? symmetric tilt grain boundaries are performed using Stillinger Weber, Tersoff, and the optimized Modified Embedded Atom Method potentials. We define a novel structural unit classification through dislocation core analysis to characterize the relaxed GB structures. GBs with the misorientation angle h ranging from 13.44° to 70.53° are solely composed of Lomer dislocation cores. For GBs with h less than but close to 70.53°, GB 'step' appears and the equilibrated states with lowest GB energies can be attained only when such GB 'step' is located in the middle of each single periodic GB structure. For the misorientation angles in the range of 93.37° ￡ h ￡ 148.41°, GB structures become complicated since they contain multiple types of dislocation cores. This work not only facilitates the structural characterization of silicon ?110? STGBs, but also may provide new insights into mirco-structure design in multicrystalline silicon.
关键词： silicon,structural units,energies,grain boundaries,atomistic simulations,dislocation cores
更新于2025-09-23 15:22:29
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Hyperspectral and Color Imaging of Solvent Vapor Sorption Into Porous Silicon
摘要： A porous silicon thin film photonic crystal (rugate) sample with both a radial gradient in the rugate reflectance band wavelength and two spatially separated pore-wall surface chemistries (methylated and oxidized) was monitored by hyperspectral and color imaging while it was dosed with vapors of acetone, ethanol, heptane, 2-propanol, and toluene at concentrations ranging from 100 to 3,000 mg m?3. The shift in the wavelength of the rugate reflectance band maximum at each position along a transect across the two surface chemistries, as derived from the hyperspectral imaging, could discriminate between the different solvents and concentrations of solvents, while the change in hue derived from the color camera data along an analogous transect did not provide discrimination. The discrimination between solvents was mainly due to the two different surface chemistries, and the gradient associated with the change in the rugate reflectance band wavelength did not affect the selectivity significantly. There was spatial variability in the spectral and color responses along the transect independent of the overall rugate reflectance band wavelength gradient and pore-wall surface chemistries, and this was attributed to factors such as the presence of striations in the silicon wafer from which the porous silicon was prepared.
关键词： sensor,porous silicon,hyperspectral imaging,surface modification,vapor sensing
更新于2025-09-23 15:22:29
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16-channel dual-tuning wavelength division multiplexer/demultiplexer
摘要： A 16-channel dual tuning wavelength division multiplexer/demultiplexer based on silicon on insulator platform is demonstrated, which is both peak wavelength tunable and output optical power tunable. The wavelength division multiplexer/demultiplexer consists of an arrayed waveguide grating for wavelength division multiplexing/demultiplexing, a heater for peak wavelength tuning and a variable optical attenuator based on p–i–n carrier-injection structure for optical power tuning. The experimental results show that the insertion loss on chip of the device is 3.7 dB–5.7 dB and the crosstalk is 7.5 dB–9 dB. For the tunability of the peak wavelength, 1.058-nm wavelength tunability is achieved with 271.2-mW power consumption, and the average modulation efficiency is 3.9244 nm/W; for the tunability of the optical power, the optical power equalization is achieved in all 16 channels, 20-dB attenuation is achieved with 144.07-mW power consumption, and the raise/fall time of VOA is 35 ns/42 ns.
关键词： arrayed waveguide grating,variable optical attenuator,silicon photonics
更新于2025-09-23 15:22:29
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[IEEE 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - Paris, France (2018.10.14-2018.10.17)] 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - Calculation of Degradation Rates of Poly Crystalline Si and CIGS PV Module using Outdoor Linear Interpolation Method
摘要： We propose the method to calculate the degradation rate of PV modules by outdoor linear interpolation method (LIM). Since the reference I-V curves which are based on measured I-V curves and used to LIM are created in each season, transitions of expected I-V curves indicate how PV modules degrade. The degradation rates of not only the maximum power but also the other parameters such as short circuit current and open circuit voltage can be calculated from the expected I-V curves. In this paper, the outdoor degradation rates of poly crystalline Si and CIGS were calculated. As a result, in poly crystalline Si case, the degradation rate of maximum power was calculated as -0.4 %/year due to short circuit current reduction. In CIGS case, although the initial power generation performance was better than the datasheet value, the annual degradation rate of the maximum power was calculated as -2.1 %/year. The reason of maximum power reduction was the reduction of both short-circuit current and open-circuit voltage.
关键词： photovoltaic module,CIGS,poly crystalline silicon,degradation,linear interpolation method
更新于2025-09-23 15:22:29
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[IEEE 2017 14th IEEE India Council International Conference (INDICON) - Roorkee (2017.12.15-2017.12.17)] 2017 14th IEEE India Council International Conference (INDICON) - Design and study of Cylindrical RF pill box window for 100 GHz BWO with Single side Tapered Output Coupler
摘要： The paper represents the design and implementation of a Silicon Pillar Bow Windmill used in LED output coupler at a frequency of 100 GHz with cylindrical waveguides. The design and simulation have been carried out using CST microwave studio. The designed windmill has a circular aluminum disc with a thickness of 3.19 μm and radius of 2500 μm. The circular disc is sandwiched between two circular waveguides. The designed windmill has been simulated and the return loss and insertion loss are obtained as -22.38 dB and -0.000723 dB respectively at this frequency. The designed windmill has good performance and can be used for low and medium power microwave applications.
关键词： Silicon Pillar Bow Windmill,LED output coupler,insertion loss,CST microwave studio,return loss,cylindrical waveguides
更新于2025-09-23 15:22:29
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Changes of the absorption cross section of Si nanocrystals with temperature and distance
摘要： The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under modulated pumping. We clearly demonstrate that roughly doubling the barrier thickness (from ca. 1 to 2.2 nm) induces a decrease of the ACS by a factor of 1.5. An optimum separation barrier thickness of ca. 1.6 nm is calculated to maximize the PL intensity yield. This large variation of ACS values with barrier thickness is attributed to a modulation of either defect population states or of the efficiency of energy transfer between confined NC layers. An exponential decrease of the ACS with decreasing temperature down to 120 K can be explained by smaller occupation number of phonons and expansion of the band gap of Si NCs at low temperatures. This study clearly shows that the ACS of Si NCs cannot be considered as independent on experimental conditions and sample parameters.
关键词： silicon nanocrystals,average lifetime,absorption cross section,photoluminescence decay,nanocrystal distance
更新于2025-09-23 15:22:29