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Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD
摘要： We present n‐type bifacial solar cells with a rear interfacial SiOx/n+:poly‐Si passivating contact (‘monoPoly’ cells) where the interfacial oxide and n+:poly‐Si layers are fabricated using an industrial inline plasma‐enhanced chemical vapor deposition (PECVD) tool. We demonstrate outstanding passivation quality with dark saturation current density (J0) values of approximately 3 fA/cm2 and implied open‐circuit voltage (iVoc) of 730 mV at 1‐sun conditions after firing in an industrial belt furnace. Using a simple solar cell process flow that can be easily adapted for mass production, a peak cell efficiency of 22.8% with a cell open circuit voltage (Voc) of 696 mV is achieved on large‐area, screen‐printed, Czochralski‐silicon (Cz‐Si) solar cells using commercial fire‐through metal pastes.
关键词： silicon wafer,screen‐printed,industrial process,passivated contacts,industrial firing,PECVD,solar cells,large‐area
更新于2025-09-04 15:30:14
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Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon
摘要： Hydrogen is one of the most important impurities in silicon. It is a mobile and highly reactive species that can passivate dangling bonds at dislocations, surfaces, and interfaces, which has been widely used in the microelectronics and solar cell industry for improving device performance. Vacancy defects are elementary complexes containing dangling bonds, and the study of their interaction with hydrogen is of significant importance. In this work, the interactions of hydrogen with the vacancy-oxygen complex (VO) and the divacancy (V2) are discussed, which are the most dominant and fundamental vacancy defects stable at room temperature. It is shown that VO and V2 can interact with both atomic and diatomic hydrogen species. This complicates the interpretation of experimental data and results in different reaction paths in differently prepared samples. Besides, some of important electronic properties, particularly electronic levels for V2Hn with n > 1, are not experimentally established.
关键词： silicon,vacancy defects,vacancy-oxygen,hydrogen,divacancy
更新于2025-09-04 15:30:14
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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0 0 0 1) Si-face substrates
摘要： In this paper, homoepitaxial growth was performed on on-axis, 4° and 8° o?-axis 4H-SiC (0001) Si-face substrate by using our home-made vertical hot wall LPCVD reactor and SiH4 + C2H4 + H2 + HCl gas system. The in?uence mechanism of growth temperature on the crystal quality, the growth rate and surface morphology is studied. The growth rate increased with the increase of growth temperature, and the epitaxial wafer surface morphology is more excellent by the increasing of o?-angle. The results demonstrate that growth temperature is a fundamental process parameter to optimize.
关键词： A3. Chemical vapor deposition processes,A2. Growth from vapor,A1. Characterization,B2. Semiconducting silicon compounds
更新于2025-09-04 15:30:14
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MEMS-based Tunable Grating Coupler
摘要： We demonstrate a microelectromechanical-system-based tunable grating coupler capable of changing the central wavelength. The grating structure is fabricated on a suspended cantilever with supporting arms and can be tuned by an applied voltage. We demonstrate a tunable range of 22.8 nm under actuation voltages of up to 12 V in the present devices. In addition, we show that the supporting arms are critical components that can be used to effectively avoid the pull-in effect.
关键词： MEMS-based tunable grating,Silicon photonics,grating coupler
更新于2025-09-04 15:30:14
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Quarter Video Graphics Array Digital Pixel Image Sensing With a Linear and Wide-Dynamic-Range Response by Using Pixel-Wise 3-D Integration
摘要： We have developed a quarter video graphics array (QVGA) digital pixel image sensor by using the 3-D integration technology. The pulse-frequency modulation (PFM) analog-to-digital converter (ADC) operates as a digital pixel, which overcomes the signal saturation due to the full well capacity of the photodiode (PD). We have also newly designed a PFM-ADC for pixels with a pinned PD and a floating diffusion to comply with the CMOS image sensor process used to attain high sensitivity and low noise. PDs, comparators, logic circuits, and counters are integrated into two silicon-on-insulator layers by pixel-wise 3-D integration with gold electrodes with a 5 μm diameter, thereby achieving a QVGA resolution for a 20-mm square chip in the 0.18- and 0.2-μm process nodes. The developed sensor exhibits both the excellent linearity and a wide-dynamic range of more than 96 dB. Video images with a high bit depth of 16 bit are also obtained to demonstrate the superior image sensing, capable of capturing the real world at high fidelity.
关键词： analog-to-digital converters (ADCs),dynamic range,image sensors,3-D integrated circuits,integrated circuit interconnections,pulse generation,silicon on insulator (SOI)
更新于2025-09-04 15:30:14
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High Performance On-Chip Supercapacitors Based on Mesoporous Silicon Coated with Ultrathin Atomic-Layer-Deposited In2O3 Films
摘要： On-chip supercapacitors have attracted considerable attention due to their high power density, long cycling life and compatibility with integrated circuits. One critical drawback that restricts their practical application is the low energy density. In this work, low-resistivity mesoporous silicon with a high aspect ratio is prepared by Pt film assisted-chemical etching and utilized as the scaffold of the supercapacitors. Subsequently, low resistivity (0.001 Ω·cm) and ultrathin In2O3 films are coated on the mesoporous silicon scaffold by atomic layer deposition at 200 oC, serving as the active electrode material. The electrochemical measurements reveal that the coating of the In2O3 film remarkably improves the performance of the supercapacitors compared to those without the In2O3 coating. The supercapacitors with a 4.5 nm In2O3 film coating exhibit a capacitance density of 1.36 mF/cm2 at a scan rate of 10 mV/s as well as a better stability against the scan rate. In addition, it is found that the pristine mesoporous silicon walls are collapsed after 400 times of sweeping while those with the In2O3 film coating are still intact even after 2000 times of sweeping. Meanwhile, a high energy density is also achieved without sacrificing the power performance.
关键词： In2O3 films,Pt assisted chemical etching,Mesoporous silicon,On-chip supercapacitors,Atomic layer deposition
更新于2025-09-04 15:30:14
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Propulsion and assembly of remotely powered p-type silicon microparticles
摘要： In this letter, we discuss how to prepare millions of uniform p-type silicon (Si) microparticles using top-down fabrication processes and how to remotely control their dynamics when they are suspended in water and powered by external alternating current (AC) electric fields. These microparticles present positively charged carrier types (majority carriers from boron atom doping in the intrinsic Si) and negatively charged carrier types (minority carriers from the free electrons in the Si lattice), which electrostatically affects their negatively charged surfaces and enables a variety of programmable behaviors, such as directional assembly and propulsion. At high AC electric field frequencies ( f > 10 kHz), the microparticles assemble by attractive dielectrophoretic polarization forces. At low electric field frequencies ( f ≤ 10 kHz), the microparticles propel by induced-charge electrophoretic flows. The ability to manipulate the electrostatic potential distribution within and around the microparticles (i.e., by controlling electronic carrier types through doping) is useful for designing a number of new dynamic systems and devices with precise control over their behaviors.
关键词： AC electric fields,induced-charge electrophoretic flows,p-type silicon microparticles,dielectrophoretic polarization
更新于2025-09-04 15:30:14
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The effects of curvature on the thermal conduction of bent silicon nanowire
摘要： Curvature induced by mechanical deformation in nanostructures has been found to significantly affect their stability and reliability during applications. In this work, we investigated the effects of curvature induced by mechanical bending on the thermal properties of silicon nanowire (SiNW) by using molecular dynamics simulations. By examining the relationship between the curved geometry and local temperature/heat flux distribution, we found that there is no temperature gradient/heat flux along the radial direction of the bent SiNW, and the local heat current density along the circumferential direction varies with the radius of curvature. Interestingly, a ～10% reduction in the thermal conductivity is found in the bent SiNW due to the depression of long-wavelength phonons caused by its inhomogeneous deformation. The present work demonstrates that the curvature induced by mechanical bending can be used to modulate the thermal conductivity of SiNWs.
关键词： thermal conductivity,curvature,silicon nanowire,thermal conduction,molecular dynamics simulations
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs
摘要： The short circuit (SC-SOA) capability of power devices is crucial for power systems. In this paper, 1.2 kV SiC MOSFETs and JBSFETs are characterized, and their SC-SOA behavior was tested and analyzed. Due to the lower saturated drain current, the JBSFETs were found to have superior SC-SOA compared with MOSFETs despite the integrated Schottky contact. A new short circuit failure mechanism related to melting of the top Al metallization is proposed based up on non-isothermal TCAD numerical simulations supported with SEM measurements of failed die using Energy Dispersive X-ray Spectroscopy (EDS) analysis.
关键词： JBSFET,Robustness,MOSFET,Reliability,Silicon Carbide,4H-SiC,Failure Mechanism,Short Circuit,Ruggedness
更新于2025-09-04 15:30:14
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Low-temperature homoepitaxial growth of two-dimensional antimony superlattices in silicon
摘要： The authors present a low-temperature process for the homoepitaxial growth of antimony superlattices in silicon. The all low-temperature superlattice doping process is compatible as a postfabrication step for device passivation. The authors have used low-temperature molecular beam epitaxy to embed atomically thin (2D), highly concentrated layers of dopant atoms within nanometers of the surface. This process allows for dopant densities on the order of 1013–1014 cm?2 (1020–1021 cm?3); higher than can be achieved with three-dimensional doping techniques. This effort builds on prior work with n-type delta doping; the authors have optimized the growth processes to achieve delta layers with sharp dopant profiles. By transitioning from a standard effusion cell to a valved cracker cell for antimony evaporation, the authors have achieved carrier densities approaching 1021 cm?3 with peak distribution at ～10 ? FWHM for single delta layers. Even at the highest dopant concentrations studied, no deterioration in carrier mobility is observed, suggesting the upper limit for dopant incorporation and activation has not yet been met. The authors will discuss the details related to growth optimization and show results from in situ monitoring by electron diffraction. They will also report on elemental and electrical characterization of the films.
关键词： silicon,molecular beam epitaxy,surface passivation,homoepitaxial growth,delta doping,low-temperature,antimony superlattices
更新于2025-09-04 15:30:14