研究目的
To effectively control the crystallization of the light absorbing layer in perovskite solar cells to improve performance and stability.
研究成果
The introduction of PbC2O4 as a non-halide lead source in the perovskite precursor solution effectively retarded the nucleation rate and improved the crystallization process, leading to larger grain sizes and fewer defects. This resulted in enhanced device performance, with an optimal PCE of 20.20% under one sun illumination and 34.86% under indoor conditions. The study demonstrates the potential of non-halide lead compounds in improving the morphology and performance of perovskite solar cells.
研究不足
The study focuses on the use of PbC2O4 as a dopant in MAPbI3 perovskite solar cells. The applicability of this dopant to other types of perovskite materials and the long-term stability of the devices were not extensively explored.
1:Experimental Design and Method Selection:
The study employed a conventional planar heterojunction architecture based on ITO/TiO2/OTP (with or without PbC2O4 dopant)/spiro-OMeTAD/MoO3/Ag. The active layer was prepared with a PbC2O4 doped MAPbI
2:Sample Selection and Data Sources:
The perovskite precursor solution was prepared by dissolving CH3NH3I and PbI2 at a ratio of 1:1 in a 1,4-Butyrolactone (GBL) and Dimethyl sulfoxide (DMOS) mixed solvent.
3:List of Experimental Equipment and Materials:
Materials included CH3NH3I, PbI2, PbC2O4, Spiro-OMeTAD, Li-TFSI, tBP, and chlorobenzene. Equipment included a spin coater, SEM, AFM, XRD, PL spectrometer, and Keithley 2400 source meter.
4:Experimental Procedures and Operational Workflow:
The perovskite thin film was fabricated by one-step spin coating followed by annealing. Devices were characterized under AM
5:5G solar illumination and indoor conditions. Data Analysis Methods:
Data analysis included SEM and AFM for morphology, XRD for crystal structure, PL for recombination behavior, and J-V curves for device performance.
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CH3NH3I
Youxuan Tech company
Perovskite precursor material
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PbI2
99.999%
Perovskite precursor material
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PbC2O4
Aladdin
Non-halide lead dopant
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Spiro-OMeTAD
Youxuan Tech company
Hole transport material
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Li-TFSI
Youxuan Tech company
Additive for hole transport material
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tBP
Youxuan Tech company
Additive for hole transport material
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Chlorobenzene
Sigma Aldrich
Solvent for hole transport material
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FTO glass
Substrate for device fabrication
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TiO2
Electron transport layer
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MoO3
Interface layer
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Ag
Electrode material
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