摘要： The hole transport layer NiOx based inverted perovskite solar cells (PSCs) have advantages of simple fabrication, low temperature and low cost. Furthermore, p-type NiOx material compared to typical n-type SnOX for PSCs has better photo-stability potential due to its lower photocatalysis ability. However, some typical materials modified NiOx layer show relatively simple functions which limit the synthesized performance of NiOx based inverted PSCs. The phenethyl ammonium iodide (PEAI) was introduced to modify NiOx/perovskite interface, which can synchronously contribute to better crystallinity and stability of perovskite layer, passivating interface defects, formed quasi-2D PEA2PbI4 perovskite layer and superior interface contact properties. The PCEs of PSCs with PEAI modified the interface of NiOx/perovskite layer was obviously increased from 20.31 % from 16.54 % of the reference PSCs. The PSCs with PEAI modification remained 75% and 72% of the original PCE values aging for 10 h at 85 °C and 65 days in relative humidity of 15%, which are superior to that (47% and 51%) of the original PCE values for the reference PSCs, respectively. Therefore, PSCs with PEAI modified NiOx/perovskite interface show higher PCEs and better thermal stability and moisture resistance.