研究目的
Investigating the effects of aggregation and electron transport levels of two triazino-isoquinoline tetrafluoroborate electrolytes as hole-blocking layers in methylammonium triiodide perovskite photovoltaic devices.
研究成果
The application of small molecule electrolytes as hole-blocking layers in inverted architecture perovskite solar cells enhances the open-circuit voltage. The study demonstrates that the dipole strength induced by the layer is more critical than the position of charge transport levels in determining device performance.
研究不足
The study focuses on the effects of aggregation and electron transport levels of specific electrolytes as hole-blocking layers in perovskite solar cells. The findings may not be directly applicable to other types of hole-blocking materials or device architectures.
1:Experimental Design and Method Selection:
The study involves the synthesis and investigation of two triazino-isoquinoline tetrafluoroborate electrolytes as hole-blocking layers in perovskite solar cells. Theoretical calculations and ultra-violet photoemission spectroscopy measurements were employed to understand the dipole moment and ionization potential of the molecules.
2:Sample Selection and Data Sources:
The samples were fabricated with the structure: glass/ITO/PEDOT:PSS/MAPbI3/PCBM/HBL/Ag, where HBL is either BCP or the synthesized electrolytes.
3:List of Experimental Equipment and Materials:
Materials include Methylammonium iodide, PEDOT:PSS, PCBM, and the synthesized electrolytes. Equipment includes a Keithley 2450 Source Measure Unit for J-V characterization, a Jasco UV–vis V670 spectrometer for UV–vis absorption measurements, and a Thermo Scientific ESCALAB 250Xi for UPS measurements.
4:Experimental Procedures and Operational Workflow:
The devices were fabricated by spin-coating the layers sequentially, followed by annealing and electrode deposition. Photovoltaic performance was characterized under simulated AM
5:5 G sunlight. Data Analysis Methods:
The data was analyzed to understand the effect of the hole-blocking layer on the device performance, including open-circuit voltage, short-circuit current, and fill factor.
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