研究目的
Investigating the effect of Ar plasma treatment on resistive switching and the negative photo-conductivity (NPC) effect in an SiO2/Cu stack.
研究成果
The Ar plasma treatment reduces the resistive switching voltage in the SiO2/Cu stack by 33% and suppresses the NPC effect. This is attributed to the formation of a more complete Cu filament due to accelerated Cu-ion diffusion into the oxide, facilitated by OH? ions derived from adsorbed water molecules. The findings suggest a simple surface treatment step can modulate both electrical and optical resistance in the CBRAM.
研究不足
The study is limited to the SiO2/Cu stack and does not explore other materials or configurations. The effects of different plasma treatment conditions were not investigated.
1：Experimental Design and Method Selection:
The study examines resistive switching and the NPC effect in an Ar-plasma-treated SiO2/Cu stack using a conductive atomic force microscope (C-AFM).
2：Sample Selection and Data Sources:
A 30-nm Ti adhesion layer and a 30-nm Cu electrode layer were sputtered on a HF-cleaned p-Si substrate, followed by the deposition of a 10-nm SiO2 electrolyte layer.
3：List of Experimental Equipment and Materials:
Conductive atomic force microscope (C-AFM), Oxford Plasmalab-100 RIE system, Bruker VERTEX 70v spectrometer, Keithley SCS4200 parameter analyzer.
4：Experimental Procedures and Operational Workflow:
The samples were treated with an Ar plasma, and their electrical characteristics were measured via a C-AFM. The effect of visible-light illumination on the leakage current was investigated.
5：Data Analysis Methods:
The current-voltage (I-V) curves and current-time (I-t) plots were analyzed to study the resistive switching and NPC effect.
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