研究目的
Investigating the high-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3.
研究成果
The study successfully demonstrated the growth of high-quality GaN/AlN multiple quantum wells with abrupt interfaces and achieved high-efficiency deep-ultraviolet emission at 235 nm. The maximum efficiency of 0.75% was observed in an electron-beam-pumped emitter, highlighting the potential of these structures for UV photonic devices.
研究不足
The study is limited by the technical constraints of growing ultra-thin GaN/AlN quantum wells and the application constraints of electron-beam-pumped UV emitters, including the need for high electron-beam energy and current.
1：Experimental Design and Method Selection:
The study involved the growth of GaN/AlN single- and multiple-quantum-well heterostructures using plasma-assisted molecular-beam epitaxy under metal-rich conditions and low temperatures.
2：Sample Selection and Data Sources:
Samples were grown on c-sapphire substrates with AlN nucleation layers.
3：List of Experimental Equipment and Materials:
A PAMBE setup Compact 2lT (Riber) was used for growth, along with scanning transmission electron microscopy and X-ray diffraction for structural analysis.
4：Experimental Procedures and Operational Workflow:
The growth process was monitored in situ by reflection high-energy electron diffraction, laser reflection, and a multi-beam optical stress sensor. Ex situ studies included high-angle annular dark-field scanning transmission electron microscopy and X-ray diffraction.
5：Data Analysis Methods:
Photoluminescence and cathodoluminescence spectra were measured to analyze the emission properties.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
