研究目的
Investigating the influence of low energy negative Li ion implantation on the properties of electrochemically induced scaffold-based growth of PbSe nanowires.
研究成果
The study revealed that negative Li ion implantation increases the current in PbSe nanowires without significantly altering their morphology, which could be beneficial for applications in sensors, IR detectors, and thermoelectric devices. The crystallite size and strain increased with ion fluence, while the optical bandgap decreased due to the creation of shallow states near the band edges.
研究不足
The study is limited to the effects of low energy negative Li ion implantation on PbSe nanowires. The findings may not be directly applicable to other materials or higher energy implantations.
1：Experimental Design and Method Selection:
PbSe nanowires were synthesized using restrictive template-based electrodeposition technique and implanted with 200 keV negative Li ions at different fluences. The morphology was characterized by FESEM, and structural properties were analyzed using XRD. Optical and electrical properties were studied using UV-Vis spectroscopy, photoluminescence, and I-V measurements.
2：Sample Selection and Data Sources:
PbSe nanowires were synthesized in porous polycarbonate templates. The samples were characterized before and after ion implantation.
3：List of Experimental Equipment and Materials:
FESEM (Nova Nano FE-SEM 450), XRD (Bruker AXS diffractometer), UV-Vis NIR Spectrophotometer (LAMBDA 750), Raman spectrometer (Renishaw inVia), Photoluminescence spectrometer (QM-8450-11), Keithley source meter (2400).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Electrodeposition was performed using a three-electrode electrochemical cell. Ion implantation was carried out using a low energy ion implanter. Characterization was performed post-implantation.
5：Data Analysis Methods:
Crystallite size was evaluated using modified Scherrer and Williamson-Hall methods. Optical bandgap was calculated using Kubelka-Munk function. Electrical properties were analyzed from I-V curves.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
Field Emission Scanning Electron Microscope
Nova Nano FE-SEM 450
FEI
Characterization of nanowire morphology
暂无现货
预约到货通知
-
X-ray Diffractometer
Bruker AXS diffractometer
Bruker
Analysis of crystal structure
暂无现货
预约到货通知
-
UV-Vis NIR Spectrophotometer
LAMBDA 750
Perkin Elmer
Study of optical properties
立即获取同款设备 -
Source Meter
2400
Keithley
Measurement of I-V characteristics
暂无现货
预约到货通知
-
Raman Spectrometer
Renishaw inVia
Renishaw
Study of lattice dynamics and defects
暂无现货
预约到货通知
-
Photoluminescence Spectrometer
QM-8450-11
Photon Technology International
Measurement of emission spectra
暂无现货
预约到货通知
-
登录查看剩余4件设备及参数对照表
查看全部
