1：Experimental Design and Method Selection:

The study used single-source thermal evaporation for film deposition and annealing in vacuum or N2 atmosphere to investigate phase transitions and properties. Theoretical models included XRD, Raman spectroscopy, and electrical measurements to analyze crystal structure and carrier transport.

2：Sample Selection and Data Sources:

CIS polycrystalline ingot was grown using the vertical Bridgman method from high-purity elements (Cu, In, S). Films were deposited on quartz glass substrates, with Ag doping at 5 at% for some samples.

3：List of Experimental Equipment and Materials:

Equipment included XRD (D/MAX-3C), SEM (JEOL JSM-6700F), EDS, UV–vis–IR spectrometer (UH4150), Keithley 4200-SCS semiconductor parameter analyzer, Lab RAM HR800UV Raman spectrometer, and 660E electrochemical workstation. Materials included quartz glass substrates, Cu (99.999%), In (99.999%), S (99.7%), and Ag powder.

4：999%), In (999%), S (7%), and Ag powder. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Films were deposited under 10^{-3} Pa pressure, annealed at temperatures from 350°C to 550°C in vacuum or N2. Characterization involved XRD for phase analysis, SEM for morphology, EDS for composition, UV–vis for optical properties, I-V and C-V for electrical properties, and Raman for structural analysis.

5：Characterization involved XRD for phase analysis, SEM for morphology, EDS for composition, UV–vis for optical properties, I-V and C-V for electrical properties, and Raman for structural analysis. Data Analysis Methods:

5. Data Analysis Methods: Data were analyzed using Scherrer formula for grain size, Harris texture coefficient for crystal quality, and Mott-Schottky equation for carrier concentration. Statistical analysis included plotting absorption coefficients and calculating band gaps.