研究目的
To examine the functional electrical and optical properties of PVA films doped with various wt% of yttrium nitrate salt, and investigate their potential use in optoelectronic and varistor devices.
研究成果
The doping of PVA with Y3+ ions increases amorphous degree and cluster size, reduces optical energy gap and transmittance, and induces nonlinear I-V behavior characteristic of varistors. These findings suggest potential applications in optoelectronic devices and varistors, with recommendations for future work on optimizing doping levels and exploring other rare earth elements.
研究不足
The study is limited to specific doping concentrations of Y3+ ions in PVA; other dopants or concentrations were not explored. The experiments were conducted at ambient temperature, and effects of temperature variations were not investigated. The scalability and long-term stability of the films for industrial applications were not addressed.
1:Experimental Design and Method Selection:
The study used a standard solution casting technique to synthesize PVA films doped with yttrium nitrate. Various characterization techniques including XRD, FTIR, SEM, UV-Vis-NIR spectroscopy, dielectric measurements, and I-V characteristics were employed to analyze structural, optical, and electrical properties.
2:Sample Selection and Data Sources:
PVA powder (4N purity, polymerization degree 1700–1800) from Alfa Aesar and Yttrium (III) nitrate hexahydrate (3N purity) were used. Samples were prepared with specific weights (0.037, 0.37, 3.7, 18.5, and 37 wt%) of Y3+ ions in PVA solution.
3:037, 37, 7, 5, and 37 wt%) of Y3+ ions in PVA solution. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes Shimadzu XRD-6000 diffractometer, Thermo Nicolet 6700 FTIR spectrometer, JSM-6360 SEM, JASCO V-570 spectrophotometer, and 4200-SCS KEITHLEY semiconductor system. Materials include PVA, Y(NO3)3·6H2O, distilled water, petri dishes.
4:Experimental Procedures and Operational Workflow:
PVA was dissolved in distilled water, stirred, and mixed with Y3+ salt. Solutions were ultrasonicated, poured into petri dishes, and evaporated at 40°C for 5 days to form films. Characterization involved XRD (10°–60° 2θ range), FTIR (500–4000 cm?1 range), SEM imaging, UV-Vis-NIR transmittance (220–900 nm), dielectric measurements (3 kHz–10 MHz), and I-V measurements.
5:Data Analysis Methods:
Data were analyzed using Gaussian fitting for XRD peaks, Tauc's formula for energy gap calculation, and slope analysis for I-V characteristics to determine nonlinear behavior.
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X-ray diffractometer
XRD-6000
Shimadzu
Used for x-ray diffraction measurements to analyze crystal structure and size.
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FTIR spectrometer
Nicolet 6700
Thermo
Used for Fourier transform infrared spectroscopy to study functional groups.
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Scanning electron microscope
JSM-6360
JEOL
Used for obtaining surface images via scanning electron microscopy.
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Spectrophotometer
V-570
JASCO
Used for UV-visible-NIR transmittance spectroscopy to measure optical parameters.
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Semiconductor system
4200-SCS
KEITHLEY
Used for dielectric constant measurement and current-voltage characteristics.
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PVA powder
Alfa Aesar
Base material for polymer films.
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Yttrium nitrate hexahydrate
Dopant material for PVA films.
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