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Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor
摘要： In this study, the ?lling process of high aspect ratio through-silicon-vias (TSVs) under dense conditions using the electroplating method was ef?ciently achieved and optimized. Pulsed power was used as the experimental power source and the electroplating solution was prepared with various additive concentrations. Designed control variable experiments were conducted to determine the optimized method. In the control variable experiments, the relationship of multiple experimental variables, including current density (0.25–2 A/dm2), additive concentration (0.5–2 mL/L), and different shapes of TSVs (circle, oral, and square), were systematically analyzed. Considering the electroplating speed and quality, the in?uence of different factors on experimental results and the optimized parameters were determined. The results showed that increasing current density improved the electroplating speed but decreased the quality. Additives worked well, whereas their concentrations were controlled within a suitable range. The TSV shape also in?uenced the electroplating result. When the current density was 1.5 A/dm2 and the additive concentration was 1 mL/L, the TSV ?lling was relatively better. With the optimized parameters, 500-μm-deep TSVs with a high aspect ratio of 10:1 were fully ?lled in 20 h, and the via density reached 70/mm2. Finally, optimized parameters were adopted, and the electroplating of 1000-μm-deep TSVs with a diameter of 100 μm was completed in 45 h, which is the deepest and smallest through which a three-dimensional inductor has ever been successfully fabricated.
关键词： electroplating,high aspect ratio,through-silicon-vias (TSV),three-dimensional (3D) inductor,control variable method
更新于2025-09-09 09:28:46
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Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals
摘要： The formation of high-brightness single-photon sources (SPSs) that emit single photons at room temperature was recently con?rmed in oxygen-annealed SiC semiconductors (surface SPSs.) However, the defect structure of surface SPSs remains unclear, which makes device fabrication and property control dif?cult. To verify the incorporation of oxygen in surface SPSs, we fabricated SPSs using stable 18O isotopes as oxidants. By comparing this to the case of natural oxygen annealing, we found that the SP emission spectra for the 18O sample tended to have shorter peak wavelengths, slightly narrower peak widths, and higher intensities. Thus, it appeared that, in the case of the 18O sample, the phonon sideband was located closer to the zero-phonon line and that oxygen was incorporated into the defects attributed to the surface SPS.
关键词： single-photon sources,single defect,silicon carbide,oxygen isotope,semiconductors,photoluminescence
更新于2025-09-09 09:28:46
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Recent Developments Accelerating SiC Adoption
摘要： The benefits of SiC devices for use in power electronics has been long understood, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point [1,15]. It takes the confluence of many separate developments to build the necessary momentum for accelerated adoption, and we will examine these factors.
关键词： SiC MOSFET,SiC reliability,SiC Schottky Diode,SiC gate oxide,SiC Cascode,Supercascode,Silicon Carbide,SiC,SiC packaging,SiC applications,SiC epitaxy,SiC substrates
更新于2025-09-09 09:28:46
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Multioutputs single-stage gate driver on array with wide temperature operable thin-film-transistor liquid-crystal display for high resolution application
摘要： A hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver with multioutputs (eight outputs per stage) for high reliability, 10.7‐inch automotive display has been proposed. The driver circuit is composed of one SR controller, eight driving TFTs (one stage to eight outputs) with bridging TFTs. The SR controller, which starts up the driving TFTs, could also prevent the noise of gate line for nonworking period. The bridging TFT, using width decreasing which connects between the SR controller and the driving TFT, could produce the floating state which is beneficial to couple the gate voltage, improves the driving ability of output, and reaches consistent rising time in high temperature and low temperature environment. Moreover, 8‐phase clocks with 75% overlapping and dual‐side driving scheme are also used in the circuit design to ensure enough charging time and reduce the loading of each gate line. According to lifetime test results, the proposed gate driver of 720 stages pass the extreme temperature range test (90°C and ?40°C) for simulation, and operates stably over 800 hours at 90°C for measurement. Besides, this design is successfully demonstrated in a 10.7‐inch full HD (1080 × RGB×1920) TFT‐liquid‐crystal display (LCD) panel.
关键词： thin film transistor (TFT),wide temperature,high reliability,gate driver,amorphous silicon (a‐Si)
更新于2025-09-09 09:28:46
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Crystal and Electronic Structure and Optical Properties of <i>AE</i> <sub/>2</sub> SiP <sub/>4</sub> ( <i>AE</i> = Sr, Eu, Ba) and Ba <sub/>4</sub> Si <sub/>3</sub> P <sub/>8</sub>
摘要： Three new compounds in the AE-Si-P (AE = Sr, Eu, Ba) systems are reported. Sr2SiP4 and Eu2SiP4, the first members of their respective ternary systems, are isostructural to previously reported Ba2SiP4 and crystallize in the noncentrosymmetric I4ˉ2d (no. 122) space group. Ba4Si3P8 crystallizes in the new structure type, in P21/c (no. 14) space group, mP-120 Pearson symbol, Wyckoff sequence e30. In the crystal structures of Sr2SiP4 and Eu2SiP4 all SiP4 tetrahedral building blocks are connected via formation of P–P bonds forming a three-dimensional framework. In the crystal structure of Ba4Si3P8, Si-P tetrahedral chains formed by corner-sharing, edge-sharing, and P–P bonds are surrounded by Ba cations. This results in a quasi-one-dimensional structure. Electronic structure calculations and UV/Vis measurements suggest that the AE2SiP4 (AE = Sr, Eu, Ba) are direct bandgap semiconductors with bandgaps of ca. 1.4 eV and have potential for thermoelectric applications.
关键词： Silicon,Barium,Ternary system,Semiconductors
更新于2025-09-09 09:28:46
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Two-level system damping in a quasi-one-dimensional optomechanical resonator
摘要： Nanomechanical resonators have demonstrated great potential for use as versatile tools in a number of emerging quantum technologies. For such applications, the performance of these systems is restricted by the decoherence of their fragile quantum states, necessitating a thorough understanding of their dissipative coupling to the surrounding environment. In bulk amorphous solids, these dissipation channels are dominated at low temperatures by parasitic coupling to intrinsic two-level system (TLS) defects; however, there remains a disconnect between theory and experiment on how this damping manifests in dimensionally reduced nanomechanical resonators. Here, we present an optomechanically mediated thermal ringdown technique, which we use to perform simultaneous measurements of the dissipation in four mechanical modes of a cryogenically cooled silicon nanoresonator, with resonant frequencies ranging from 3–19 MHz. Analyzing the device’s mechanical damping rate at fridge temperatures between 10 mK and 10 K, we demonstrate quantitative agreement with the standard tunneling model for TLS ensembles con?ned to one dimension. From these ?ts, we extract the defect density of states (P0 ～ 1?4 × 1044 J?1 m?3) and deformation potentials (γ ～ 1–2 eV), showing that each mechanical mode couples on average to less than a single thermally active defect at 10 mK.
关键词： Quantum technologies,Nanomechanical resonators,Optomechanical,Mechanical damping rate,Deformation potentials,Tunneling model,Defect density of states,Two-level system (TLS) defects,Silicon nanoresonator
更新于2025-09-09 09:28:46
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Landscape of s-triazine molecule on Si(100) by a theoretical x-ray photoelectron spectroscopy and x-ray absorption near-edge structure spectra study
摘要： The chemisorbed structure for an aromatic molecule on a silicon surface plays an important part in promoting the development of organic semiconductor material science. The carbon K-shell x-ray photoelectron spectroscopy (XPS) and the x-ray absorption near-edge structure (XANES) spectra of the interfacial structure of an s-triazine molecule adsorbed on Si(100) surface have been performed by the ?rst principles, and the landscape of the s-triazine molecule on Si(100) surface has been described in detail. Both the XPS and XANES spectra have shown their dependence on different structures for the pristine s-triazine molecule and its several possible adsorbed con?gurations. By comparison with the XPS spectra, the XANES spectra display the strongest structural dependency of all of the studied systems and thus could be well applied to identify the chemisorbed s-triazine derivatives. The exploration of spectral components originated from non-equivalent carbons in disparate local environments has also been implemented for both the XPS and XANES spectra of s-triazine adsorbed con?gurations.
关键词： silicon surface,x-ray absorption near-edge structure (XANES),x-ray photoelectron spectroscopy (XPS),s-triazine
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP) - Portland, OR, USA (2018.11.13-2018.11.14)] 2018 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP) - Sources of RF Intermodulation Distortion in Silicon Photonic Modulators
摘要： We present a model of intermodulation distortion (IMD) in RF silicon photonic modulators to highlight mechanisms that limit the device linearity. We compare the SFDR of two MZMs to show a common IMD limitation and indicate methods to improve linearity in silicon photonic RF modulators.
关键词： intermodulation distortion,silicon photonic modulators,SFDR,RF photonic systems,linearity
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP) - Portland, OR, USA (2018.11.13-2018.11.14)] 2018 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP) - Linear Ring Modulators with DC Kerr Phase Shifters
摘要： We demonstrate a silicon ring modulator with linear phase shift versus voltage, derived from the interplay between plasma dispersion effect and DC Kerr effect. The dynamic range is 103.6 dB. Hz2/3 at a 1.2 GHz carrier.
关键词： silicon ring modulator,plasma dispersion effect,linear phase shift,dynamic range,DC Kerr effect
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur (2018.8.15-2018.8.17)] 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Characterization of SOI Film Thickness, Oxide Thickness and Charges with C-V Measurement
摘要： Capacitance-Voltage measurement is a crucial method to characterize and study the behavior of the device. In this work, the capacitance voltage characteristics of a partially depleted Silicon-On-Insulator MOSFET were analyzed and discussed. The important parameters like the gate oxide thickness, buried oxide thickness, silicon film thickness, fixed oxide charges and interface trapped charges were extracted from the capacitance voltage between the front gate and drain/source at different back gate voltage. The measured results were in good agreement with inline and XSEM result. The frequency dependency on the result is also observed and discussed in this paper.
关键词： Accumulation,Charges,Inversion,PD MOSFET,Silicon-On-Insulator,Depletion,C-V Characteristics
更新于2025-09-09 09:28:46