摘要： Doping in organic–inorganic perovskite semiconductors is an effective method to tailor their optoelectronic properties. In this work, manganese-doped perovskite films with different Mn/Pb ratios ranging from 0% to 2% were systematically studied. The device performance of 0.2% Mn-doped devices was improved compared to that of a device without Mn. However, a further increase of the doping concentration induced a decrease in performance. Several characteristics (especially different scanning probe microscopy characteristics) reveal that an increased dopant concentration results in reduced crystallinity and a change in the film morphology and causes a deterioration in photovoltaic performance for higher dopant concentrations. In the best-performing samples (0.2%), a shift in the valence band level and band gap are found which are responsible for the increased open circuit voltage, while increased grain boundaries and lower surface charge density are responsible for a small reduction in the short circuit current. Thus, multifunctional scanning probe microscopy approaches, combined with different film characterization techniques, offer us effective tools to investigate the impact of doping in the perovskite materials and the corresponding device performance.